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參數資料
| 型號： | STP2NA50FI |
| 廠商： | 意法半導體 |
| 英文描述： | Supercapacitor; Capacitance:1.5F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin; Termination:Radial Leaded; ESR:30ohm; Lead Pitch:20mm; Operating Temp. Max:70 C RoHS Compliant: Yes |
| 中文描述： | ? -通道增強型功率MOS器件 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 57K |
| 代理商： | STP2NA50FI |
STP2NA50
STP2NA50FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 3.25
I
±
30V GATE TO SOURCE VOLTAGE RATING
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
LOW INTRINSIC CAPACITANCES
I
GATECHARGE MINIMIZED
I
REDUCED THRESHOLD VOLTAGESPREAD
APPLICATIONS
I
MEDIUMCURRENT, HIGH SPEED
SWITCHING
I
SWITCH MODE POWER SUPPLIES (SMPS)
I
CONSUMER AND INDUSTRIAL LIGHTING
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS(on)
< 4
<
4
I
D
STP2NA50
STP2NA50FI
500 V
500 V
2.8 A
2 A
March 1996
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP2NA50
STP2NA50FI
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-Source Voltage (V
gs
= 0)
Drain-Gate Voltage (R
gs
= 20 K
)
Gate-Source Voltage
Drain-Current (continuous) at T
c
= 25
o
C
Drain-Current (continuous) at T
c
= 100
o
C
Drain-Current (Pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Insulation Withstand Voltage (DC)
Storage Temperature
Max Operating Junction Temperature
(
)Pulse width limited by safe operating area
500
500
±
30
V
V
V
A
A
A
W
2.8
1.8
11.2
75
0.6
-
2
1.25
11.2
35
0.28
4000
W/
o
C
V
o
C
o
C
V
ISO
T
stg
T
j
-65 to 150
150
1
2
3
TO-220
ISOWATT220
1
2
3
1/6
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