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參數資料
型號: STP30NE03LFP
廠商: 意法半導體
英文描述: Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:100uF; Capacitance Tolerance:+/- 20%; ESR:150mohm; Leaded Process Compatible:Yes RoHS Compliant: Yes
中文描述: ? -通道30V的- 0.028歐姆- 30A條TO-220/TO-220FP STripFET功率MOSFET
文件頁數: 1/9頁
文件大小: 105K
代理商: STP30NE03LFP
STP30NE03L
STP30NE03LFP
N - CHANNEL 30V - 0.028
- 30A TO-220/TO-220FP
STripFET
POWER MOSFET
I
TYPICAL R
DS(on)
= 0.028
I
100%AVALANCHE TESTED
I
LOW GATE CHARGE
I
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest developmentof
STMicroelectronics
unique
Size
” strip-based process. The resulting transi-
stor shows extremelyhigh packing density forlow
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturingreproducibility.
”Single
Feature
APPLICATIONS
I
DC MOTORCONTROL
I
DC-DC & DC-AC CONVERTERS
I
SYNCHRONOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP30NE03L
STP30NE03LFP
V
DS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
30
V
V
DGR
30
±
20
V
V
GS
I
D
I
D
I
DM
(
)
P
tot
V
30
17
A
21
12
A
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
120
68
A
70
25
W
0.47
0.17
W/
o
C
V
ISO
T
stg
Insulation Withstand Voltage (DC)
2000
V
o
C
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
175
o
C
TYPE
V
DSS
R
DS(on)
< 0.04
< 0.04
I
D
STP30NE03L
STP30NE03LFP
30 V
30 V
30 A
17 A
June 1999
TO-220
TO-220FP
1
2
3
1
2
3
1/9
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