- 您現在的位置：買賣IC網 > PDF目錄382562 > STP3NA100FI (意法半導體) N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強模式快速功率MOS晶體管) PDF資料下載
參數資料
| 型號： | STP3NA100FI |
| 廠商： | 意法半導體 |
| 英文描述： | N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強模式快速功率MOS晶體管) |
| 中文描述： | N溝道增強模式快速功率MOS晶體管（不適用溝道增強模式快速功率馬鞍山晶體管） |
| 文件頁數： | 1/9頁 |
| 文件大小： | 115K |
| 代理商： | STP3NA100FI |
STP3NA100
STP3NA100FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
I
TYPICAL R
DS(on)
= 4.3
I
±
30V GATE TO SOURCE VOLTAGE RATING
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
LOWINTRINSIC CAPACITANCES
I
GATECHARGE MINIMIZED
I
REDUCED THRESHOLD VOLTAGESPREAD
I
APPLICATIONS
I
HIGH CURRENT, HIGH SPEEDSWITCHING
I
SWITCH MODE POWER SUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
February 1998
TO-220
TO-220FI
1
2
3
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP3NA100
STP3NA100FI
1000
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
V
1000
±
30
V
V
3.5
2.0
A
2.0
14
1.2
14
A
A
110
45
W
0.88
0.36
W/
o
C
V
ISO
T
stg
T
j
Insulation Withstand Voltage (DC)
Storage Temperature
2000
V
o
C
o
C
-65 to 150
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operating area
150
TYPE
V
DSS
R
DS(on)
<5
< 5
I
D
STP3NA100
STP3NA100FI
1000 V
1000 V
3.5 A
2 A
1/9
相關PDF資料 |
PDF描述 |
|---|---|
| STP3NA100 | N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強模式快速功率MOS晶體管) |
| STP3NB100FP | N-Channel 1000V-5.3Ω-3A- TO-220/TO-220FP PowerMESH MOSFET(N溝道MOSFET) |
| STP3NB100 | N-Channel 1000V-5.3Ω-3A- TO-220/TO-220FP PowerMESH MOSFET(N溝道MOSFET) |
| STP3NB80FP | N-Channel 800V-4.6Ω-2.6A- TO-220/TO-220FP PowerMESHTM MOSFET(N溝道MOSFET) |
| STP3NC50 | N-CHANNEL 500V - 3ohm - 2.8A TO-220 PowerMesh⑩II MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| STP3NA100FP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
| STP3NA50 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STP3NA50FI | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STP3NA60 | 功能描述:MOSFET N-Ch 600 Volt 2.9 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP3NA60FI | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
發布緊急采購，3分鐘左右您將得到回復。