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參數資料
| 型號： | STP3NB80FP |
| 廠商： | 意法半導體 |
| 英文描述： | N-Channel 800V-4.6Ω-2.6A- TO-220/TO-220FP PowerMESHTM MOSFET(N溝道MOSFET) |
| 中文描述： | N溝道800V的-4.6Ω- 2.6A的電流，TO-220/TO-220FP PowerMESHTM MOSFET的（不適用溝道MOSFET的） |
| 文件頁數： | 1/9頁 |
| 文件大?。?/td> | 112K |
| 代理商： | STP3NB80FP |
STP3NB80
STP3NB80FP
N - CHANNEL 800V - 4.6
- 2.6A - TO-220/TO-220FP
PowerMESH
MOSFET
I
TYPICAL R
DS(on)
= 4.6
I
EXTREMELYHIGH dv/dt CAPABILITY
I
100%AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family
of
power
outstanding performances.
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
MOSFETs
The
new
with
patent
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
UNINTERRUPTIBLE POWER SUPPLY(UPS)
I
DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
September 1998
TO-220
TO-220FP
1
2
3
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP3NB80
STP3NB80FP
800
800
±
30
2.6 (
)
1.6 (
)
10.4
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
(
)
Limited only by maximum temperature allowed
V
V
V
A
A
A
W
2.6
1.6
10.4
90
0.72
35
0.28
4.5
2000
W/
o
C
V/ns
V
o
C
o
C
dv/dt(
1
)
V
ISO
T
stg
T
j
-65 to 150
150
(
1
) I
SD
≤
2.6 A
,
di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMA
TYPE
V
DSS
R
DS(on)
< 6.5
< 6.5
I
D
STP3NB80
STP3NB80FP
800 V
800 V
2.6 A
2.6 A(ùù)
1/9
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相關代理商/技術參數 |
參數描述 |
|---|---|
| STP3NB90 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 900V - 4 ohm - 3.5 A - TO-220/TO-220FP PowerMESH MOSFET |
| STP3NB90FP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 900V - 4 ohm - 3.5 A - TO-220/TO-220FP PowerMESH MOSFET |
| STP3NC50 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 500V - 3ohm - 2.8A TO-220 PowerMesh⑩II MOSFET |
| STP3NC60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 3.3ohm - 3A TO-220/TO-220FP PowerMeshII MOSFET |
| STP3NC60FP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 3.3ohm - 3A TO-220/TO-220FP PowerMeshII MOSFET |
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