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參數資料
型號: STP3NC50
廠商: 意法半導體
英文描述: N-CHANNEL 500V - 3ohm - 2.8A TO-220 PowerMesh⑩II MOSFET
中文描述: N溝道500V - 3ohm - 2.8A至二220 PowerMesh⑩MOSFET的
文件頁數: 1/8頁
文件大小: 238K
代理商: STP3NC50
1/8
May 2001
STP3NC50
N-CHANNEL 500V - 3
- 2.8A TO-220
PowerMeshII MOSFET
I
TYPICAL R
DS
(on) = 3
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
NEW HIGH VOLTAGE BENCHMARK
I
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
II is
the evolution of the first
generation of MESH OVERLAY
.
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITH MODE POWER SUPPLIES (SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(1)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
()Pulse width limited by safe operating area
.
TYPE
V
DSS
R
DS(on)
I
D
STP3NC50
500 V
< 4
2.8 A
Parameter
Value
Unit
500
V
500
V
±30
V
2.8
A
1.8
A
11.2
A
75
W
0.6
3
W/°C
V/ns
–60 to 150
°C
150
°C
(1)I
SD
2.8A, di/dt
100A/μs, V
DD
V
(BR)DSS
, T
j
T
JMAX
TO-220
1
2
3
INTERNAL SCHEMATIC DIAGRAM
相關PDF資料
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相關代理商/技術參數
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