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參數資料
| 型號： | STP3NC70Z |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 700V - 4.1ohm - 2.5A TO-220/TO-220FP Zener-Protected PowerMESH⑩III MOSFET |
| 中文描述： | N溝道高達700V - 4.1ohm -包2.5a TO-220/TO-220FP齊保護的PowerMESH⑩三MOSFET的 |
| 文件頁數： | 1/10頁 |
| 文件大?。?/td> | 324K |
| 代理商： | STP3NC70Z |
1/10
June 2001
STP3NC70Z
STP3NC70ZFP
N-CHANNEL 700V - 4.1
- 2.5A TO-220/TO-220FP
Zener-Protected PowerMESHIII MOSFET
(1) I
SD
≤
2.5A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(*) Limited by Maximum Temperature allowed
I
TYPICAL R
DS
(on) = 4.1
I
EXTREMELY HIGH dv/dt AND CAPABILITY
GATE TO - SOURCE ZENER DIODES
I
100% AVALANCHE TESTED
I
VERY LOW GATE INPUT RESISTANCE
I
GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY
Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrat-
ing back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capa-
bility with higher ruggedness performance as re-
quested by a large variety of single-switch
applications.
APPLICATIONS
I
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
I
WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STP3NC70Z
STP3NC70ZFP
700V
700V
< 4.7
< 4.7
2.5 A
2.5 A
Parameter
Value
Unit
STP3NC70Z
STP3NC70ZFP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
G
)
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
700
V
700
V
Gate- source Voltage
± 25
V
Drain Current (continuos) at T
C
= 25°C
Drain Current (continuos) at T
C
= 100°C
2.5
2.5 (*)
A
1.6
1.6 (*)
A
Drain Current (pulsed)
10
10
A
Total Dissipation at T
C
= 25°C
Derating Factor
65
35
W
0.52
0.28
W/°C
I
GS
Gate-source Current (DC)
±50
mA
V
ESD(G-S)
dv/dt (1)
V
ISO
T
stg
T
j
Gate source ESD(HBM-C=100pF, R=1.5K
)
Peak Diode Recovery voltage slope
1.5
KV
3
V/ns
Insulation Withstand Voltage (DC)
-
2500
V
Storage Temperature
–65 to 150
°C
Max. Operating Junction Temperature
150
°C
TO-220
1
2
3
TO-220FP
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相關代理商/技術參數 |
參數描述 |
|---|---|
| STP3NC70ZFP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 700V - 4.1ohm - 2.5A TO-220/TO-220FP Zener-Protected PowerMESH⑩III MOSFET |
| STP3NC90Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 900V - 3.2ohm - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH⑩III MOSFET |
| STP3NC90Z-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 90V V(BR)DSS | 3.5A I(D) | TO-262AA |
| STP3NC90ZFP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 900V - 3.2ohm - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH⑩III MOSFET |
| STP3NK100Z | 功能描述:MOSFET 1000V 5.4Ohm 2.5A Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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