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參數資料
| 型號： | STP3NB100 |
| 廠商： | 意法半導體 |
| 英文描述： | N-Channel 1000V-5.3Ω-3A- TO-220/TO-220FP PowerMESH MOSFET(N溝道MOSFET) |
| 中文描述： | N溝道1000V -5.3Ω- 3A條，TO-220/TO-220FP PowerMESH MOSFET的（不適用溝道MOSFET的） |
| 文件頁數： | 1/6頁 |
| 文件大小： | 45K |
| 代理商： | STP3NB100 |
STP3NB100
STP3NB100FP
N - CHANNEL 1000V - 5.3
- 3 A - TO-220/TO-220FP
PowerMESH
MOSFET
TARGET DATA
I
TYPICAL R
DS(on)
= 5.3
I
EXTREMELYHIGH dv/dt CAPABILITY
I
100%AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family
of
power
outstanding performances.
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
MOSFETs
The
new
with
patent
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCH MODE POWER SUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
October 1998
TO-220
TO-220FP
1
2
3
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP3NB100
STP3NB100FP
1000
1000
±
30
3(**)
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
(
**) Limitedonly by T
MAX
V
V
V
A
A
A
W
3
1.9
12
100
0.8
4.5
1.1
12
35
0.28
4.5
2000
W/
o
C
V/ns
V
o
C
o
C
dv/dt(
1
)
V
ISO
T
stg
T
j
-65 to 150
150
(
1
) I
SD
≤
3
Α,
di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 6
< 6
I
D
STP3NB100
STP3NB100FP
1000 V
1000 V
3 A
3 A
1/6
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| STP3NC50 | N-CHANNEL 500V - 3ohm - 2.8A TO-220 PowerMesh⑩II MOSFET |
| STP3NC70ZFP | N-CHANNEL 700V - 4.1ohm - 2.5A TO-220/TO-220FP Zener-Protected PowerMESH⑩III MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| STP3NB100FP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 1000V - 5.3 ohm - 3 A - TO-220/TO-220FP PowerMESH MOSFET |
| STP3NB60 | 功能描述:MOSFET RO 512-FQP3N60 3/05 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP3NB60FP | 制造商:STMicroelectronics 功能描述:MOSFET Transistor, N-Channel, TO-220AB(FP) |
| STP3NB80 | 功能描述:MOSFET N-Ch 800 Volt 3 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP3NB80FP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 800V - 4.6ohm - 2.6A - TO-220/TO-220FP PowerMESH MOSFET |
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