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參數資料
| 型號： | STP4NB30 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 300V - 1.8ohm - 4A - TO-220/TO-220FP PowerMesh⑩ MOSFET |
| 中文描述： | N溝道300V - 1.8ohm -第4A - TO-220/TO-220FP PowerMesh⑩MOSFET的 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 331K |
| 代理商： | STP4NB30 |
1/9
May 2001
STP4NB30
STP4NB30FP
N-CHANNEL 300V - 1.8
- 4A - TO-220/TO-220FP
PowerMesh MOSFET
(1)I
SD
≤
4 A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(*) Limited only by Maximum Temperature Allowed
I
TYPICAL R
DS
(on) = 1.8
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
NEW HIGH VOLTAGE BENCHMARK
I
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITH MODE POWER SUPPLIES (SMPS)
I
DC-AC CONVERTERS FOR TELECOM,
INDUSTRIAL AND CONSUMER
ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STP4NB30
STP4NB30FP
300 V
300 V
< 2
< 2
4 A
4 A
Parameter
Value
Unit
STP4NB30
STP4NB30FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(1)
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
300
V
300
V
Gate- source Voltage
±30
V
Drain Current (continuos) at T
C
= 25°C
Drain Current (continuos) at T
C
= 100°C
4
4 (*)
A
2.5
2.5 (*)
A
Drain Current (pulsed)
16
16 (*)
A
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
70
30
W
0.56
0.24
W/°C
V/ns
dv/dt
V
ISO
T
stg
T
j
4
Insulation Withstand Voltage (DC)
-
2000
V
Storage Temperature
–65 to 150
°C
Max. Operating Junction Temperature
150
°C
TO-220
1
2
3
1
2
3
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
相關PDF資料 |
PDF描述 |
|---|---|
| STP4NB30FP | N-CHANNEL 300V - 1.8ohm - 4A - TO-220/TO-220FP PowerMesh⑩ MOSFET |
| STP4NB50FP | N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強模式MOSFET) |
| STP4NB50 | N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強模式MOSFET) |
| STP4NB80FP | N-Channel 800V-3Ω-4A- TO-220/TO-220FP PowerMESHTM MOSFET(N溝道MOSFET) |
| STP4NB80 | N-Channel 800V-3Ω-4A- TO-220/TO-220FP PowerMESHTM MOSFET(N溝道MOSFET) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| STP4NB30FP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 300V - 1.8ohm - 4A - TO-220/TO-220FP PowerMesh⑩ MOSFET |
| STP4NB50 | 功能描述:MOSFET RO 511-STP4NK50Z RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP4NB50FP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 500V - 2.5ohm - 3.8A - TO-220/TO-220FP PowerMesh⑩ MOSFET |
| STP4NB80 | 功能描述:MOSFET RO 512-FQP4N80 3/05 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP4NB80FP | 制造商:STMicroelectronics 功能描述: 制造商:STME 功能描述: |
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