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參數(shù)資料
| 型號： | STP4NB50FP |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強(qiáng)模式MOSFET) |
| 中文描述： | N溝道增強(qiáng)模式PowerMESHTM MOSFET的（不適用溝道增強(qiáng)模式MOSFET的） |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 63K |
| 代理商： | STP4NB50FP |
STP4NB50
STP4NB50FP
N - CHANNEL ENHANCEMENT MODE
PowerMESH
MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 2.5
I
100% AVALANCHE TESTED
I
VERYLOW INTRINSIC CAPACITANCES
I
GATECHARGE MINIMIZED
I
EXTREMELY HIGH dv/dt CAPABILITY
DESCRIPTION
Using
OVERLAY
process,
designed
MOSFETs with outstanding performance. The
new patent pending strip layout coupled with the
Company’s
proprietary
structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled
gate
charge
characteristics.
the
latest
high
SGS-Thomson
advanced
voltage
MESH
has
Power
an
family
of
edge
termination
and
switching
APPLICATIONS
I
HIGH CURRENT, HIGH SPEEDSWITCHING
I
SWITCH MODE POWER SUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
P
AOWER SUPPLIESAND MOTOR DRIVE
This ispreliminary information on a new product now in development or undergoing evaluation. Details are subject to changewithout notice.
INTERNAL SCHEMATIC DIAGRAM
Symbol
Parameter
Value
Unit
STP4NB50
STP4NB50FP
500
500
±
30
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operating area
V
V
V
A
A
A
W
3.8
2.4
15.2
80
0.64
4.5
2.5
1.6
15.2
35
0.28
4.5
2000
W/
o
C
V/ns
V
o
C
o
C
dv/dt(
1
)
V
ISO
T
stg
T
j
-65 to 150
150
(
1
) I
SD
≤
4A, di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
March 1998
1
2
3
TO-220
TO-220FP
1
2
3
TYPE
V
DSS
500 V
500 V
R
DS(on)
< 2.8
< 2.8
I
D
STP4NB50
STP4NB50FP
3.8 A
2.5 A
1/7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STP4NB50 | N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強(qiáng)模式MOSFET) |
| STP4NB80FP | N-Channel 800V-3Ω-4A- TO-220/TO-220FP PowerMESHTM MOSFET(N溝道MOSFET) |
| STP4NB80 | N-Channel 800V-3Ω-4A- TO-220/TO-220FP PowerMESHTM MOSFET(N溝道MOSFET) |
| STP4NC50 | N-CHANNEL 500V - 2.2ohm - 4A TO-220/TO-220FP PowerMeshII MOSFET |
| STP4NC50FP | INTEGRATED EC000 MPU |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP4NB80 | 功能描述:MOSFET RO 512-FQP4N80 3/05 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP4NB80FP | 制造商:STMicroelectronics 功能描述: 制造商:STME 功能描述: |
| STP4NC50 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 500V - 2.2ohm - 4A TO-220/TO-220FP PowerMeshII MOSFET |
| STP4NC50FP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 500V - 2.2ohm - 4A TO-220/TO-220FP PowerMeshII MOSFET |
| STP4NC60 | 功能描述:MOSFET N-Ch 600 Volt 4 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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