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參數(shù)資料
| 型號： | STP4NC50 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 500V - 2.2ohm - 4A TO-220/TO-220FP PowerMeshII MOSFET |
| 中文描述： | N溝道500V - 2.2ohm - MOSFET的4A條TO-220/TO-220FP PowerMeshII |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 107K |
| 代理商： | STP4NC50 |
1/9
May 2000
STP4NC50
STP4NC50FP
N-CHANNEL 500V - 2.2
- 4A TO-220/TO-220FP
PowerMesh
II MOSFET
I
TYPICAL R
DS
(on) = 2.2
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
NEW HIGH VOLTAGE BENCHMARK
I
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
II is the evolution of the first
generation of MESH OVERLAY
.
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITH MODE POWER SUPPLIES (SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
ABSOLUTE MAXIMUM RATINGS
Symbol
(
)Pulse width limitedby safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STP4NC50
500 V
< 2.7
4 A
STP4NC50FP
500 V
< 2.7
4 A
Parameter
Value
Unit
STP4NC50
STP4NC50FP
V
DS
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
500
V
V
DGR
500
V
V
GS
Gate- source Voltage
Drain Current (continuos) at T
C
= 25
°
C
Drain Current (continuos) at T
C
= 100
°
C
±
30
V
I
D
4
4(*)
A
I
D
2.5
2.5(*)
A
I
DM
(
G
)
P
TOT
Drain Current (pulsed)
Total Dissipation at T
C
= 25
°
C
Derating Factor
12
16(*)
A
80
40
W
0.64
0.32
W/
°
C
V/ns
dv/dt (1)
Peak Diode Recovery voltage slope
3.5
V
ISO
T
stg
T
j
Insulation Withstand Voltage (DC)
-
2000
V
Storage Temperature
–65 to 150
°
C
°
C
Max. Operating Junction Temperature
150
(1)I
SD
≤
4A, di/dt
≤
100A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
INTERNAL SCHEMATIC DIAGRAM
1
2
3
1
2
3
TO-220
TO-220FP
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP4NC50FP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 500V - 2.2ohm - 4A TO-220/TO-220FP PowerMeshII MOSFET |
| STP4NC60 | 功能描述:MOSFET N-Ch 600 Volt 4 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP4NC60 | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220 |
| STP4NC60A | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh⑩II MOSFET |
| STP4NC60AFP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh⑩II MOSFET |
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