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參數資料
| 型號： | STP4NC60FP |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh⑩II MOSFET |
| 中文描述： | N溝道600V的- 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh第二MOSFET的⑩ |
| 文件頁數： | 1/10頁 |
| 文件大小： | 356K |
| 代理商： | STP4NC60FP |
1/10
April 2003
STP4NC60 - STP4NC60FP
STB4NC60-1
N-CHANNEL 600V - 1.8
- 4.2A TO-220/TO-220FP/I
2
PAK
PowerMeshII MOSFET
(*)Limited only by maximum Temperature allowed
I
TYPICAL R
DS
(on) = 1.8
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
NEW HIGH VOLTAGE BENCHMARK
I
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
II is the evolution of the first
generation of MESH OVERLAY
.
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITH MODE POWER SUPPLIES (SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVERS
ABSOLUTE MAXIMUM RATINGS
Symbol
()Pulse width limited by safe operating area
(1)I
≤
4.2A, di/dt
≤
300A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
TYPE
V
DSS
R
DS(on)
I
D
STP4NC60
STP4NC60FP
STB4NC60-1
600V
600V
600V
< 2.2
< 2.2
< 2.2
4.2A
4.2A
4.2A
Parameter
Value
Unit
STP(B)4NC60(-1)
STP4NC60FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
600
V
600
V
Gate- source Voltage
±30
V
Drain Current (continuos) at T
C
= 25°C
Drain Current (continuos) at T
C
= 100°C
4.2
4.2(*)
A
2.6
2.6(*)
A
Drain Current (pulsed)
16.8
16.8(*)
A
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
100
35
W
0.8
3.5
0.28
3.5
W/°C
V/ns
dv/dt(1)
V
ISO
T
stg
T
j
Insulation Withstand Voltage (DC)
-
2500
V
Storage Temperature
–65 to 150
°C
Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
TO-220
2
3
TO-220FP
123
I
2
PAK
(Tabless TO-220)
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