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參數資料
| 型號： | STP60N06-14 |
| 廠商： | 意法半導體 |
| 英文描述： | N-Channel Enhancement Mode Power MOS Transistor(Ｎ溝道增強模式功率ＭＯＳ晶體管) |
| 中文描述： | N溝道增強模式功率MOS晶體管（不適用溝道增強模式功率馬鞍山晶體管） |
| 文件頁數： | 1/5頁 |
| 文件大小： | 77K |
| 代理商： | STP60N06-14 |
STP60N05-14
STP60N06-14
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.012
I
AVALANCHE RUGGED TECHNOLOGY
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
LOW GATE CHARGE
I
HIGH CURRENT CAPABILITY
I
175
o
C OPERATING TEMPERATURE
I
VERY LOW R
DS (on)
I
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SOLENOID AND RELAY DRIVERS
I
REGULATORS
I
DC-DC & DC-AC CONVERTERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS(on)
< 0.014
< 0.014
I
D
STP60N05-14
STP60N06-14
50 V
60 V
60 A
60 A
March 1996
1
2
3
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP60N05-14
50
50
STP60N06-14
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-Source Voltage (V
gs
= 0)
Drain-Gate Voltage (R
gs
= 20 K
)
Gate-Source Voltage
Drain-Current (continuous) at T
c
= 25
o
C
Drain-Current (continuous) at T
c
= 100
o
C
Drain-Current (Pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Insulation Withstand Voltage (DC)
Storage Temperature
Max Operating Junction Temperature
(
)Pulse width limited by safe operating area
60
60
V
V
V
A
A
A
±
20
60
50
240
150
1
-
W/
o
C
o
C
V
o
C
o
C
V
ISO
T
stg
T
j
-65 to 175
175
1/5
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相關代理商/技術參數 |
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| STP60N06-16 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 60A I(D) | TO-220 |
| STP60N06FI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 32A I(D) | TO-220VAR |
| STP60N3LH5 | 功能描述:MOSFET N-Ch 30V 0.0072 Ohm 48A IPAK STripFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP60N55F3 | 功能描述:MOSFET N Ch 55V 6.5mohm 80A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP60NE03L-10 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET |
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