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參數資料
型號: STP80NE06-10
廠商: 意法半導體
英文描述: CAPACITOR, CASE C, 68UF, 6.3V; Application:Solid; Capacitance:68uF; Tolerance, capacitance:20%; Series:NOS; Voltage, rating:6.3V; Capacitor dielectric type:Niobium Oxide; Case style:C; Depth, external:2.6mm; Length / Height, RoHS Compliant: Yes
中文描述: ? -通道增強型單特征尺寸功率MOSFET
文件頁數: 1/8頁
文件大小: 92K
代理商: STP80NE06-10
STP80NE06-10
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE
” POWER MOSFET
I
TYPICAL R
DS(on)
= 0.0085
I
EXCEPTIONAL dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latestdevelopment of
SGS-THOMSON unique ”Single Feature Size
strip-based
process. The resulting transistor
shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a
remarkable manufacturingreproducibility.
APPLICATIONS
I
SOLENOID ANDRELAY DRIVERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC CONVERTERS
I
AUTOMOTIVE ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
February 1998
1
2
3
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
Drain-source Voltage (V
GS
= 0)
60
V
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
60
V
V
GS
±
20
V
I
D
80
A
I
D
57
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
320
A
150
W
Derating Factor
1
W/
o
C
dv/dt
Peak Diode Recovery voltage slope
7
V/ns
o
C
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operating area
175
(
1
) I
SD
80 A,di/dt
300 A/
μ
s, V
DD
V
(BR)DSS
, T
j
T
JMAX
TYPE
V
DSS
R
DS(on)
<0.01
I
D
STP80NE06-10
60 V
80 A
1/8
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