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參數(shù)資料
| 型號： | STQ1NE10L |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 100V - 0.3 ohm - 1A TO-92 STripFET⑩ POWER MOSFET |
| 中文描述： | N溝道100V的- 0.3歐姆- 1A至- 92 STripFET⑩功率MOSFET |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 311K |
| 代理商： | STQ1NE10L |
1/9
December 2002
.
STQ1NE10L
N-CHANNEL 100V - 0.3
- 1A TO-92
STripFET POWER MOSFET
I
TYPICAL R
DS
(on) = 0.3
I
EXCEPTIONAL HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
AVALANCHE RUGGED TECHNOLOGY
I
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
I
DC MOTOR CONTROL (DISK DRIVES, etc.)
I
DC-DC & DC-AC CONVERTERS
I
SYNCHRONOUS RECTIFICATION
TYPE
V
DSS
R
DS(on)
I
D
STQ1NE10L
100 V
<0.4
1 A
TO-92
TO-92
(Ammopack)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
(1)
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt
(2)
Peak Diode Recovery voltage slope
E
AS
(3)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Operating Junction Temperature
Pulse width limited by safe operating area.
(1)
Related to R
thj
-l
(2) I
SD
≤
1A, di/dt
≤
200A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(3) Starting T
j
= 25
o
C, I
D
= 1A, V
DD
= 50V
Parameter
Value
100
100
± 16
1
0.6
4
3
0.025
6
400
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
°C
-55 to 150
INTERNAL SCHEMATIC DIAGRAM
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STQ1NE10L_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 100V - 0.3ヘ - 1A - TO-92 STripFET⑩ Power MOSFET |
| STQ1NE10L-AP | 制造商:STMicroelectronics 功能描述:STQ1NE10L Series N-Channel 100 V 0.4 Ohm STripFET Power MOSFET - TO-92 |
| STQ1NK60ZR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET |
| STQ1NK60ZR-AP | 功能描述:MOSFET N-CH 600V 0.3A TO-92 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:SuperMESH™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| STQ1NK60ZR-AP_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600V - 13Ω - 0.8A - TO-92 - TO-251 - SOT-223 Zener-Protected SuperMESH? Power MOSFET |
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