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參數資料
| 型號： | STS4DNF60L |
| 廠商： | 意法半導體 |
| 英文描述： | N-Channel 60V-0.045Ω-4A SO-8 STripFET Power MOSFET(N溝道功率MOSFET) |
| 中文描述： | N溝道60V的，0.045Ω- 4A條的SO - 8 STripFET功率MOSFET（不適用溝道功率MOSFET的） |
| 文件頁數： | 1/5頁 |
| 文件大小： | 70K |
| 代理商： | STS4DNF60L |
STS4DNF60L
N - CHANNEL 60V - 0.045
- 4A SO-8
STripFET
POWER MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.045
I
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
I
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique " Single Feature
Size
"
strip-based process. The resulting
transistor shows extremely high packing density
for
low
on-resistance,
characteristics and less critical alignment steps
therefore
a
remarkable
reproducibility.
rugged
avalanche
manufacturing
APPLICATIONS
I
DC MOTOR DRIVE
I
DC-DC CONVERTERS
I
BATTERY MANAGMENT IN NOMADIC
EQUIPMENT
I
POWER MANAGMENT IN
PORTABLE/DESKTOP PC
s
INTERNAL SCHEMATIC DIAGRAM
December 1998
SO-8
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
60
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
60
V
V
GS
Gate-source Voltage
Drain Current (continuous) at Tc = 25
o
C
Single Operation
Drain Current (continuous) at T
c
= 100
o
C
Single Operation
±
20
V
I
D
4
2.5
A
A
I
DM
(
)
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C Dual Operation
Total Dissipation at T
c
= 25
o
C Single Operation
(
) Pulse width limited by safe operating area
16
A
P
tot
2
1.6
W
W
TYPE
V
DSS
60 V
R
DS(on)
< 0.055
I
D
4 A
STS4DNF60L
1/5
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相關代理商/技術參數 |
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| STS4DNFS30L_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.044ohm - 4A SO-8 STripFET TM MOSFET plus SCHOTTKY rectifier |
| STS4DPF20L | 功能描述:MOSFET P-Ch 20 Volt 4 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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