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參數(shù)資料
型號: STS4DNFS30L
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 30V - 0.044ohm - 4A SO-8 STripFET⑩ II MOSFET PLUS SCHOTTKY RECTIFIER
中文描述: N溝道30V的- 0.044ohm - 4A條的SO - 8 STripFET⑩二肖特基整流器MOSFET的普樂士
文件頁數(shù): 1/8頁
文件大小: 244K
代理商: STS4DNFS30L
1/8
July 2002
STS4DNFS30L
N-CHANNEL 30V - 0.044
- 4A SO-8
STripFET II MOSFET PLUS SCHOTTKY RECTIFIER
DESCRIPTION
This product associates the latest low voltage
STripFET
in n-channel version to a low drop
Schottky diode. Such configuration is extremely ver-
satile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and cel-
lular phones.
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(
G
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
Repetitive Peak Reverse Voltage
I
F(RMS)
RMS Forward Current
I
F(AV)
Average Forward Current
()Pulse width limited by safe operating area
MAIN PRODUCT CHARACTERISTICS
MOSFET
V
DSS
R
DS(on)
I
D
30 V
< 0.055
4 A
SCHOTTKY
I
F(AV)
V
RRM
V
F(MAX)
3 A
30 V
0.51 V
Parameter
Value
Unit
30
V
30
V
± 16
V
4
A
2.5
A
16
A
2
W
Parameter
Value
Unit
30
V
20
A
TL = 125°C
δ
= 0.5
tp = 10 ms
Sinusoidal
tp = 2
μ
s
F=1 kHz
tp = 100
μ
s
3
A
I
FSM
Surge Non Repetitive Forward Current
75
A
I
RRM
Repetitive Peak Reverse Current
1
A
I
RSM
dv/dt
Non Repetitive Peak Reverse Current
1
A
Critical Rate Of Rise Of Reverse Voltage
10000
V/
μ
s
SO-8
INTERNAL SCHEMATIC DIAGRAM
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