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參數資料
型號: STSJ20NM20N
英文描述: N-CHANNEL 200V 0.11 OHM 20A POWERSO-8 ULTRA LOW GATE CHARGE MDMESH II MOSFET
中文描述: N溝道200伏0.11歐姆20A條POWERSO - 8超低柵極電荷的MDmesh MOSFET的二
文件頁數: 1/8頁
文件大小: 223K
代理商: STSJ20NM20N
1/8
August 2002
STSJ2NM60
N-CHANNEL 600V - 2.8
- 2A PowerSO-8
Zener-Protected MDmesh POWER MOSFET
I
TYPICAL R
DS
(on) = 2.8
I
HIGH dv/dt AND AVALANCHE CAPABILITIES
I
IMPROVED ESD CAPABILITY
I
LOW INPUT CAPACITANCE AND GATE
CHARGE
I
LOW GATE INPUT RESISTANCE
I
TIGHT PROCESS CONTROL AND HIGH
MANUFACTORING YIELDS
DESCRIPTION
The MDmesh
is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar completition’s products.
APPLICATIONS
The MDmesh family is very suitable for increase
the power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
A
= 25°C (1)
Drain Current (continuous) at T
C
= 100°C
I
DM
(2)
Drain Current (pulsed)
P
TOT
P
TOT
Total Dissipation at T
A
= 25°C (1)
Derating Factor (1)
dv/dt (3)
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
TYPE
V
DSS
R
DS(on)
I
D
STSJ2NM60
600 V
< 3.2
2 A
Parameter
Value
Unit
600
V
600
V
± 30
V
2
0.37
1.26
A
A
A
8
A
Total Dissipation at T
C
= 25°C
70
3
W
W
0.02
15
W/°C
V/ns
– 65 to 150
°C
PowerSO-8
INTERNAL SCHEMATIC DIAGRAM
DRAIN CONTACT ALSO ON THE BACKSIDE
相關PDF資料
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