- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385878 > STU6NA90 (意法半導(dǎo)體) N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | STU6NA90 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| 中文描述： | ? -快速通道增強型功率MOS器件 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 71K |
| 代理商： | STU6NA90 |
STU6NA90
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 1.5
I
±
30V GATE TO SOURCE VOLTAGE RATING
I
REPETITIVE AVALANCHE TESTED
I
LOW INTRINSIC CAPACITANCE
I
100% AVALANCHE TESTED
I
GATE CHARGE MINIMIZED
I
REDUCED THRESHOLD VOLTAGE
SPREAD
DESCRIPTION
The Max220
package is a new high volume
power package exibiting the same footprint as the
industry standard TO-220, but designed to
accomodate much larger silicon chips, normally
supplied in bigger packages. The increased die
capacity makes the device ideal to reduce
component count in multiple paralleled TO-220
designs and save board space with respect to
larger packages.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCH MODE POWER SUPPLIES (SMPS)
I
CONSUMER AND INDUSTRIAL LIGHTING
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES (UPS)
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS(on)
< 2
I
D
STU6NA90
900 V
5.8 A
March 1996
123
Max220
TM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
900
V
900
V
V
GS
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
±
30
5.8
V
I
D
I
D
A
3.7
A
I
DM
(
)
23.2
A
P
tot
145
W
Derating Factor
1.16
W/
o
C
o
C
o
C
T
stg
T
j
Storage Temperature
-65 to 150
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
150
1/5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STU7NA80 | N - CHANNEL 800V - 1.3ohm - 6.5A - Max220 FAST POWER MOSFET |
| STU7NA90 | N - CHANNEL 900V - 1.05 ohm - 7A - Max220 FAST POWER MOS TRANSISTOR |
| STU7NB100 | N - CHANNEL 1000V - 1.2ohm - 7.3A - Max220 PowerMESH MOSFET |
| STU7NB90 | N-CHANNEL 900V - 1.1 ohm - 7.3 A Max220/Max220I PowerMesh⑩ MOSFET |
| STU7NB90I | N-CHANNEL 900V - 1.1 ohm - 7.3 A Max220/Max220I PowerMesh⑩ MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STU6NF10 | 功能描述:MOSFET N-Ch, 100V-0.22ohms 6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STU70N2LH5 | 功能描述:MOSFET N-Ch, 25V-0.006ohms 48A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STU75N3LLH6 | 功能描述:MOSFET POWER MOSFET N-CH 30V 75 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STU75N3LLH6-S | 功能描述:MOSFET N-channel 30 V 0.0042 ohm 75A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STU7LN80K5 | 功能描述:MOSFET N-CH 800V 5A IPAK 制造商:stmicroelectronics 系列:MDmesh?? 包裝:管件 零件狀態(tài):有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標準 漏源極電壓（Vdss）:800V 電流 - 連續(xù)漏極（Id）（25°C 時）:5A（Tc） 不同?Id，Vgs 時的?Rds On（最大值）:1.15 歐姆 @ 2.5A，10V 不同 Id 時的 Vgs（th）（最大值）:5V @ 100μA 不同 Vgs 時的柵極電荷（Qg）:12nC @ 10V 不同 Vds 時的輸入電容（Ciss）:270pF @ 100V 功率 - 最大值:85W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:通孔 封裝/外殼:TO-251-3 短引線，IPak，TO-251AA 供應(yīng)商器件封裝:IPAK（TO-251） 標準包裝:75 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。