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參數(shù)資料
| 型號： | STW12NK80Z |
| 廠商： | 意法半導體 |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 連接器附件 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 299K |
| 代理商： | STW12NK80Z |
1/9
October 2002
STW12NK80Z
N-CHANNEL 800V - 0.65
- 10.5A TO-247
Zener-Protected SuperMESHPower MOSFET
I
TYPICAL R
DS
(on) = 0.65
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
GATE CHARGE MINIMIZED
I
VERY LOW INTRINSIC CAPACITANCES
I
VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh products.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
IDEAL FOR OFF-LINE POWER SUPPLIES
ORDERING INFORMATION
SALES TYPE
TYPE
V
DSS
R
DS(on)
I
D
Pw
STW12NK80Z
800 V
< 0.75
10.5 A
190 W
MARKING
PACKAGE
PACKAGING
STW12NK80Z
W12NK80Z
TO-247
TUBE
TO-247
1
2
3
INTERNAL SCHEMATIC DIAGRAM
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| STW18NK60Z | N-CHANNEL 600V - 0.27з - 16A TO-247 Zener-Protected SuperMESH⑩ MOSFET |
| STW33N20 | N - CHANNEL ENHANCEMENT MODE POWER MOSFET |
| STW45NM50FD | N-CHANNEL 500V - 0.07ohm - 45A TO-247 FDmesh⑩Power MOSFET With FAST DIODE |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STW12NK80Z | 制造商:STMicroelectronics 功能描述:MOSFET N TO-247 |
| STW12NK90Z | 功能描述:MOSFET N-Ch 900 Volt 11 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW12NK95Z | 功能描述:MOSFET N-Ch 950V - 0.69 10A Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW12NM60N | 功能描述:MOSFET Ultra Fast Recovery Diode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW13009 | 功能描述:兩極晶體管 - BJT H/V FST SWCH PW TRNS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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