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參數(shù)資料
| 型號(hào)： | STW5NB100 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel 1000V-4Ω-4.3A- TO-247 PowerMESHTM MOSFET(N溝道MOSFET) |
| 中文描述： | N溝道1000V -4Ω- 4.3A至247 PowerMESHTM MOSFET的（不適用溝道MOSFET的） |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 53K |
| 代理商： | STW5NB100 |
STW5NB100
N - CHANNEL 1000V - 4
- 4.3A - TO-247
PowerMESH
MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 4
I
EXTREMELY HIGH dv/dt CAPABILITY
I
±
30V GATE TO SOURCE VOLTAGE RATING
I
100% AVALANCHE TESTED
I
LOW INTRINSIC CAPACITANCE
I
GATE CHARGE MINIMIZED
I
REDUCED VOLTAGE SPREAD
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and
dv/dt capabilities and unrivalled gate charge and
switching characteristics.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCH MODE POWER SUPPLY (SMPS)
I
DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
1000
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
1000
±
30
V
V
GS
V
I
D
I
D
4.3
A
2.7
A
I
DM
(
)
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
17
A
P
tot
160
W
Derating Factor
1.28
W/
o
C
dv/dt
(1)
Peak Diode Recovery voltage slope
4
V/ns
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area (
1
) I
SD
≤ 4 Α,
di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
June 1998
150
TYPE
V
DSS
R
DS(on)
< 4.4
I
D
STW5NB100
1000 V
4.3 A
TO-247
1
2
3
1/5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STW5NB100 | 制造商:STMicroelectronics 功能描述:MOSFET N TO-247 |
| STW5NB90 | 功能描述:MOSFET RO 511-STW7NK90Z RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW5NK100Z | 功能描述:MOSFET N-Ch 1000 Volt 3.5 A Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW60N10 | 制造商:MISCELLANEOUS 功能描述: |
| STW60N65M5 | 功能描述:MOSFET N-Ch 650V 0.049 Ohm 46A Mdmesh V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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