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參數資料
| 型號： | STW80NF55-08 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 55V - 0.0065ohm - 80A TO-247 STripFET⑩ POWER MOSFET |
| 中文描述： | N溝道55V的- 0.0065ohm - 80A的- 247 STripFET⑩功率MOSFET |
| 文件頁數： | 1/6頁 |
| 文件大小： | 114K |
| 代理商： | STW80NF55-08 |
1/6
PRELIMINARY DATA
October 2001
STW80NF55-06
N-CHANNEL 55V - 0.005
- 80A TO-247
STripFET II POWER MOSFET
(1) Starting T
j
= 25
°C, I
D
= 40A, V
DD
= 40V
(*) Current Limited by wire bonding
I
TYPICAL R
DS
(on) = 0.005
I
EXCEPTIONAL dv/dt CAPABILITY
I
100% AVALANCHE TESTED
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature Size"
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable
manufacturing reproducibility.
APPLICATIONS
I
DC-AC & DC-DC CONVERTERS
I
AUTOMOTIVE ENVIRONMENT
I
SOLENOID AND RELAY DRIVERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
(*)
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(
G
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
E
AS
(1)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(
G
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STW80NF55-06
55 V
< 0.0065
80 A
Parameter
Value
Unit
55
V
55
V
±20
V
80
A
80
A
320
A
300
W
2
W/°C
1
J
– 55 to 175
°C
TO-247
1
2
3
INTERNAL SCHEMATIC DIAGRAM
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