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參數資料
| 型號： | STY25NA60 |
| 廠商： | 意法半導體 |
| 英文描述： | N-Channel 600V-0.225Ω-25A- Max247 Extremely Low Gate Charge Power MOSFET(N溝道功率MOSFET) |
| 中文描述： | N溝道600V的0.225Ω- 25A條，Max247柵極電荷極低功率MOSFET（不適用溝道功率MOSFET的） |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 54K |
| 代理商： | STY25NA60 |
STY25NA60
N - CHANNEL 600V - 0.225
- 25A - Max247
EXTREMELY LOW GATE CHARGE POWER MOSFET
I
TYPICAL R
DS(on)
= 0.225
I
EFFICIENT AND RELIABLE MOUNTING
THROUGH CLIP
I
±
30V GATE TO SOURCE VOLTAGE RATING
I
REPETITIVE AVALANCHE TESTED
I
LOW INTRINSIC CAPACITANCE
I
100% AVALANCHE TESTED
I
GATE CHARGE MINIMIZED
I
REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
The Max247
package is a new high volume
power package exibiting the same footprint as the
industry standard TO-247, but designed to
accomodate much larger silicon chips, normally
supplied in bigger packages such as TO-264. The
increased die capacity makes the device ideal to
reduce component count in multiple paralleled
designs and save board space with respect to
larger packages.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCH MODE POWER SUPPLIES (SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES (UPS)
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS(on)
< 0.24
I
D
STY25NA60
600 V
25 A
August 1998
1
23
Max247
TM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
600
V
600
V
V
GS
I
D
±
30
25
V
A
I
D
16.5
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
100
A
300
W
Derating Factor
2.4
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-55 to 150
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
150
1/5
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