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參數資料
| 型號： | SUD19N20-90 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 200-V (D-S) 175 °C MOSFET |
| 中文描述： | N溝道200V（D-S）175℃ MOSFET |
| 文件頁數： | 1/4頁 |
| 文件大小： | 43K |
| 代理商： | SUD19N20-90 |
TrenchFET Power MOSFET
175 C Junction Temperature
PWM Optimized
Primary Side Switch
SUD19N20-90
Vishay Siliconix
New Product
Document Number: 71767
S-05233—Rev. A, 17-Dec-01
www.vishay.com
1
N-Channel 200-V (D-S) 175 C MOSFET
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.090 @ V
GS
= 10 V
19
200
0.105 @ V
GS
= 6 V
17.5
D
G
S
N-Channel MOSFET
TO-252
S
G
D
Top View
Drain Connected to Tab
Order Number:
SUD19N20-90
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
200
Gate-Source Voltage
V
GS
20
V
T
C
= 25 C
19
Continuous Drain Current (T
J
= 175 C)
b
T
C
= 125 C
I
D
11
Pulsed Drain Current
I
DM
40
A
Continuous Source Current (Diode Conduction)
I
S
19
Avalanche Current
I
AR
19
Repetitive Avalanche Energy (Duty Cycle
1%)
L = 0.1 mH
E
AR
18
mJ
T
C
= 25 C
100
b
Maximum Power Dissipation
T
A
= 25 C
P
D
3
a
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 175
C
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
15
18
Junction-to-Ambient
a
Steady State
R
thJA
40
50
C/W
Junction-to-Case (Drain)
R
thJC
1.3
1.6
Notes
a.
b.
Surface Mounted on 1” x1” FR4 Board.
See SOA curve for voltage derating.
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| SUD50N02-06P | N-Channel MOSFET, 20 V(D-S) , 175°C |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SUD19N20-90_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 200-V (D-S) 175 °C MOSFET |
| SUD19N20-90-E3 | 功能描述:MOSFET 200V 17.5A 100W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD19N20-90-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SUD19N20-90T1-E3 | 制造商:Vishay Siliconix 功能描述:TRANS MOSFET N-CH 200V 19A 3PIN TO-252 - Tape and Reel |
| SUD19N20-90-T4 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 200V 19A 3-Pin(2+Tab) DPAK T/R |
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