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參數(shù)資料
| 型號： | SUM09MN20-270 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 200-V (D-S) 175C MOSFET |
| 中文描述： | N溝道200 -五（副）175C MOSFET的 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 39K |
| 代理商： | SUM09MN20-270 |
FEATURES
TrenchFET Power MOSFETS
175 C Junction Temperature
New Low Thermal Resistance Package
SUM09N20-270
Vishay Siliconix
New Product
Document Number: 72158
S-03414—Rev. A, 03-Mar-03
www.vishay.com
1
N-Channel 200-V (D-S) 175 C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
r
DS(on)
( )
I
D
(A)
200
0.270 @ V
GS
= 10 V
0.300 @ V
GS
= 6 V
9
8.5
D
G
S
N-Channel MOSFET
TO-263
S
D
G
Top View
Ordering Information: SUM09N20-270
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
200
Gate-Source Voltage
V
GS
20
V
Continuous Drain Current
(T
J
= 175 C)
T
C
= 25 C
I
D
9
T
C
= 125 C
5.2
A
Pulsed Drain Current
I
DM
I
AR
E
AR
10
Avalanche Current
7
Repetitive Avalanche Energy
a
L = 0.1 mH
2.45
mJ
Maximum Power Dissipation
a
T
C
= 25 C
T
A
= 25 C
c
P
D
60
b
W
3.75
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 175
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Junction-to-Ambient (PCB Mount)
c
R
thJA
40
C/W
Junction-to-Case (Drain)
R
thJC
2.5
Notes
a.
b.
c.
Duty cycle
See SOA curve for voltage derating.
When mounted on 1” square PCB (FR-4 material).
1%.
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| SUM110N10-09 | TERMINAL |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SUM09N20-270 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 200-V (D-S) 175 Degree Celcious MOSFET |
| SUM09N20-270_06 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 200-V (D-S), 175Celsius MOSFET |
| SUM09N20-270-E3 | 功能描述:MOSFET 200V 9.0A 60W 270mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUM110N02-03 | 制造商:Vishay Intertechnologies 功能描述: |
| SUM110N02-03P | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) 175 C MOSFET |
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