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參數資料
| 型號： | SVD202 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | X Band VCO, PLO Hyperabrupt Junction Type GaAs Varactor Diode(X頻帶VCO，PLO結型砷化鎵變容二極管) |
| 中文描述： | X波段的VCO，解放軍Hyperabrupt聯合型砷化鎵變容二極管（X頻帶的VCO，解放軍結型砷化鎵變容二極管） |
| 文件頁數： | 1/2頁 |
| 文件大小： | 70K |
| 代理商： | SVD202 |
SVD202
Ordering number : EN5769
X Band VCO, PLO
Hyperabrupt Junction Type GaAs Varactor Diode
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
90597GI (KOTO) No.5769-1/2
Package Dimensions
unit: mm
1274
[SVD202]
1 : Cathode
2 : Anode
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Peak Reverse Voltage
Average Rectified Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Mounting Temperature
Symbol
V
rm
I
fm
P
D
Tj
Tstg
Tm
Conditions
Ratings
Unit
V
mA
mW
°C
°C
°C
30
50
500
150
–65 to +150
230/10s
Electrical Characteristics
at Ta=25°C
Parameter
Symbol
Conditions
Ratings
typ
min
max
1.4
Unit
Forward Voltage
Reverse Voltage
Reverse Current
Interterminal Capacitance
Capacitance Ratio
V
F
V
R
I
R
C
t0V
C
j0V
/ C
j25V
I
F
=10mA
I
R
=10μA
V
R
=25V
V
R
=0V, f=1MHz
V
R
=0V, 25V, f=1MHz
V
V
nA
pF
–27
100
9
11
14
11
Features
High Q.
High capacitance ratio.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SVD2N60T | 制造商:SILAN 制造商全稱:Silan Microelectronics Joint-stock 功能描述:2A, 600V NChannel MOSFET |
| SVD301 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:X Band VCO, PLO |
| SVD302 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:X Band VCO, PLO |
| SVD5804NT4G | 功能描述:MOSFET NFET 40V SPCL TR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SVD5N60AF | 制造商:SILAN 制造商全稱:Silan Microelectronics Joint-stock 功能描述:5A, 600V NCHANNEL MOSFET |
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