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參數(shù)資料
| 型號： | T1869N18TOF |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類： | 晶閘管 |
| 英文描述： | 4100 A, 1800 V, SCR |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 266K |
| 代理商： | T1869N18TOF |
N
Netz-Thyristor
Phase Control Thyristor
Datenblatt / Data sheet
T1869N
BIP PPE4 / 2006-11-29, H.Sandmann
A 04/06
1/10
Seite/page
enndaten
Elektrische Eigenschaften
Elektrische Eigenschaften / Electrical properties
Hchstzulssige Werte / Maximum rated values
Periodische Vorwrts- und Rückwrts-Spitzensperrspannung
repetitive peak forward off-state and reverse voltages
Tvj = -40°C... Tvj max
VDRM,VRRM 1600
1800
2000
2200
V
Vorwrts-Stossspitzensperrspannung
non-repetitive peak forward off-state voltage
Tvj = -40°C... Tvj max
VDSM
1600
1800
2000
2200
V
Rückwrts-Stossspitzensperrspannung
non-repetitive peak reverse voltage
Tvj = +25°C... Tvj max
VRSM
1700
1900
2100
2300
V
Durchlassstrom-Grenzeffektivwert
maximum RMS on-state current
ITRMSM
4100 A
Dauergrenzstrom
average on-state current
TC = 85 °C
TC = 60 °C
ITAVM
1869
2611
A
Stossstrom-Grenzwert
surge current
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
ITSM
40000
35000
A 1)
A
Grenzlastintegral
It-value
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
It
8000
6125
10 As
Kritische Stromsteilheit
critical rate of rise of on-state current
DIN IEC 60747-6
f = 50 Hz, iGM = 1 A, diG/dt = 1 A/s
(diT/dt)cr
200 A/s
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
Tvj = Tvj max, vD = 0,67 VDRM
5.Kennbuchstabe / 5
th letter F
(dvD/dt)cr
1000 V/s
Charakteristische Werte / Characteristic values
Durchlassspannung
on-state voltage
Tvj = Tvj max , iT = 8 kA
Tvj = Tvj max , iT = 2 kA
vT
max.
2,20
1,26
V
Schleusenspannung
threshold voltage
Tvj = Tvj max
V(TO)
0,90 V
Ersatzwiderstand
slope resistance
Tvj = Tvj max
rT
0,155 m
Durchlasskennlinie
500 A ≤ iT ≤ 9000 A
on-state characteristic
T
i
D
1)
i
(
ln
C
i
B
A
v
+
+
+
=
Tvj = Tvj max
A=
B=
C=
D=
5,416E-01
1,535E-04
6,292E-02
-1,530E-03
Zündstrom
gate trigger current
Tvj = 25 °C, vD = 12V
IGT
max.
300 mA
Zündspannung
gate trigger voltage
Tvj = 25 °C, vD = 12V
VGT
max.
2,5 V
Nicht zündender Steuerstrom
gate non-trigger current
Tvj = Tvj max , vD = 12V
Tvj = Tvj max , vD = 0,5 VDRM
IGD
max.
10
5
mA
Nicht zündende Steuerspannung
gate non-trigger voltage
Tvj = Tvj max , vD = 0,5 VDRM
VGD
max.
0,25 V
Haltestrom
holding current
Tvj = 25°C, vD = 12V
IH
max.
300 mA
Einraststrom
latching current
Tvj = 25°C, vD = 12V, RGK ≥ 10
iGM = 1 A, diG/dt = 1 A/s, tg = 20 s
IL
max.
1500 mA
Vorwrts- und Rückwrts-Sperrstrom
forward off-state and reverse current
Tvj = Tvj max
vD = VDRM, vR = VRRM
iD, iR
max.
250 mA
Zündverzug
gate controlled delay time
DIN IEC 60747-6
Tvj = 25 °C, iGM = 1 A, diG/dt = 1 A/s
tgd
max.
4 s
1) Gehusegrenzstrom IRSM(case) = 36kA (50Hz Sinus-Halbwelle) / Peak case non rupture current IRSM(case) = 36kA (50Hz sinusoidal half wave)
prepared by: H.Sandmann
date of publication:
2006-11-29
approved by: J.Przybilla
revision:
2
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| T1869N20TOF | 功能描述:SCR模塊 NETZ-THYRISTOR PHASE CONTROL RoHS:否 制造商:Vishay Semiconductors 開啟狀態(tài) RMS 電流 (It RMS):260 A 不重復通態(tài)電流:4000 A 最大轉(zhuǎn)折電流 IBO:4200 A 額定重復關(guān)閉狀態(tài)電壓 VDRM:1.6 kV 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:20 mA 開啟狀態(tài)電壓:1.43 V 保持電流（Ih 最大值）: 柵觸發(fā)電壓 (Vgt): 柵觸發(fā)電流 (Igt): 最大工作溫度:+ 150 C 安裝風格:Chassis 封裝 / 箱體:INT-A-PAK |
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