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參數(shù)資料
型號: T4312816A
廠商: TM Technology, Inc.
英文描述: 8M x 16 SDRAM
中文描述: 8米× 16內(nèi)存
文件頁數(shù): 1/29頁
文件大小: 711K
代理商: T4312816A
TE
CH
tm
SDRAM
FEATURES
3.3V power supply
Four banks operation
LVTTL compatible with multiplexed address
All inputs are sampled at the positive going
edge of system clock
Burst Read Single-bit Write operation
DQM for masking
Auto refresh and self refresh
64ms refresh period (4K cycle)
MRS cycle with address key programs
- CAS Latency ( 2 & 3 )
- Burst Length ( 1 , 2 , 4 , 8 & full page)
- Burst Type (Sequential & Interleave)
Available package type in 54 pin TSOP(II)
Operating temperature : 0 ~ +70
°
C
ORDERING INFORMATION
Preliminary T4312816A
TM Technology Inc. reserves the right
P. 1
to change products or specifications without notice.
Publication Date: APR. 2003
Revision: 0.B
8M x 16 SDRAM
2M x 16bit x 4Banks Synchronous DRAM
GRNERAL DESCRIPTION
The T4312816A is 134,217,728 bits
synchronous high data rate Dynamic RAM
organized as 4 x 2,097,152 words by 16 bits,
fabricated
with
high
technology .
performance
CMOS
Synchronous design allows precise cycle control
with the use of system clock I/O transactions are
possible on every clockcycle . Range of operating
frequencies , programmable burst length and
programmable latencies allow the same device to
be useful for a variety of high bandwidth , high
performance memory system applications.
PIN ARRANGEMENT (
Top View)
D Q 1
V
D D
4 6
4 5
4 4
4 3
4 1
4 2
4 0
3 6
3 5
3 4
3 3
3 2
3 1
3 0
2 9
1
2
3
4
6
5
7
8
9
1 1
1 5
1 6
1 7
1 8
1 9
2 0
V
D D Q
D Q 1 1
D Q 1
0
D Q 9
A 8
A 7
A 9
1 0
2 1
2 2
4 7
4 8
4 9
5 0
V
S S Q
D Q 2
A 0
A 1
D Q 1 5
D Q 1 4
V s s
2 3
2 4
2 5
2 8
2 7
2 6
D Q 3
D Q 0
V
D D Q
D Q 4
D Q 5
V
S S Q
D Q 6
R A S
C S
B A 1
A 1 0 /A P
A 2
A 3
V
D D
V
S S Q
D Q 1 3
D Q 1 2
U D Q M
N .C
C L K
C K E
V s s
A 6
A 5
A 4
1 2
1 3
1 4
3 9
3 8
3 7
D Q 7
V
D D
L D Q M
D Q 8
V s s
N .C /R F U
W E
C A S
5 4 P IN T S O P (II)
(4 0 0 m il x 8 7 5 m il)
(0 .8 m m P IN P IT C H )
5 1
5 2
5 3
5 4
V
D D Q
B A 0
V
D D Q
V
S S Q
A 1 1
PART NO.
MAX
FREQUENCY TEMPERATURE
166 MHz
T4312816A-6S
0 ~ +70
°
C
0 ~ +70
°
C
0 ~ +70
°
C
0 ~ +70
°
C
0 ~ +70
°
C
T4312816A-7S
143 MHz
T4312816A-7.5S
T4312816A-8S
133 MHz
125 MHz
T4312816A-10S
100 MHz
相關(guān)PDF資料
PDF描述
T4312816A-10S 8M x 16 SDRAM
T4312816A-6S 8M x 16 SDRAM
T4312816A-7.5S 8M x 16 SDRAM
T4312816A-7S 8M x 16 SDRAM
T4312816A-8S 8M x 16 SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
T4312816A-10S 制造商:TMT 制造商全稱:TMT 功能描述:8M x 16 SDRAM
T4312816A-6S 制造商:TMT 制造商全稱:TMT 功能描述:8M x 16 SDRAM
T4312816A-7.5S 制造商:TMT 制造商全稱:TMT 功能描述:8M x 16 SDRAM
T4312816A-7S 制造商:TMT 制造商全稱:TMT 功能描述:8M x 16 SDRAM
T4312816A-8S 制造商:TMT 制造商全稱:TMT 功能描述:8M x 16 SDRAM
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