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參數資料
型號: T431616B-20S
廠商: TM Technology, Inc.
英文描述: 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
中文描述: 100萬× 16內存為512k × 16Bit的X 2Banks同步DRAM
文件頁數: 1/31頁
文件大小: 567K
代理商: T431616B-20S
TE
CH
tm
SDRAM
T431616B
Taiwan Memory Technology, Inc. reserves the right
P. 1
to change products or specifications without notice.
Publication Date: JUL. 2001
Revision:A
1M x 16 SDRAM
512K x 16bit x 2Banks Synchronous DRAM
FEATURES
+2.7 to +3.6V power supply
Dual banks operation
LVTTL compatible with multiplexed address
All inputs are sampled at the positive going edge
of system clock
Burst Read Single-bit Write operation
DQM for masking
Auto refresh and self refresh
32ms refresh period (2K cycle)
MRS cycle with address key programs
- CAS Latency ( 1 & 2 & 3 )
- Burst Length ( 1 , 2 , 4 , 8 & full page)
- Burst Type (Sequential & Interleave)
Available package type in 50 pin TSOP(II)
and 60-pin CSP
ORDERING INFORMATION
MAX
PART NO. FREQUENCY PACKAGE
T431616B-20S 50 MHz TSOP-II
T431616B-20C 50 MHz CSP
T431616B-10S 100 MHz TSOP-II
T431616B-10C 100 MHz CSP
GRNERAL DESCRIPTION
The T431616B is 16,777,216 bits synchronous
high data rate Dynamic RAM organized as
2 x 524,288 words by 16 bits , fabricated with high
performance CMOS technology . Synchronous
design allows precise cycle control with the use of
system clock I/O transactions are possible on every
clockcycle . Range of operating frequencies ,
programmable burst length and programmable
latencies allow the same device to be useful for a
variety of high bandwidth , high performance
memory system applications.
相關PDF資料
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相關代理商/技術參數
參數描述
T431616C 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616C-6S 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616C-6SG 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616C-7S 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616C-7SG 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
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