
TA4401CT
2007-11-01
1
TOSHIBA Bipolar Linear Integrated Circuit SiGe Monolithic
TA4401CT
1.9 ~ 2.5 GHz Band Power Amplifier
Features
PHS, Digital Cordless Telecommunication Application
Wireless LAN IEEE802.11b/g Application
Bluetooth Class 1 Application
Single voltage operation
Large output power
High power gain
Nano-amp shutdown mode I
CC_OFF
= 20 nA (typ.) when V
CON
= 0 V
Small package
: CST16 (CSON16-P-0303-0.50) package
(2.9 mm × 2.9 mm × 0.48 mm)
Absolute Maximum Ratings
(Ta = 25°C)
: V
CC
= 3.0 V (typ.) for PHS
: V
CC
= 3.3 V (typ.) for IEEE802.11g
: Pout = 22.5 dBmW (min.) for PHS
: Pout = 18 dBmW (min.) for IEEE802.11g
: Gp = 35 dB (typ.) for PHS
: Gp = 27.5 dB (typ.) for IEEE802.11g
Characteristic
Symbol
Rating
Unit
V
CC
(Note 1)
3.6
V
Supply voltage
V
CON
(Note 2)
3.6
V
Input power
Pin
–3
dBmW
Power dissipation
Pd (Note 3)
1
W
Operating temperature range
Topr
–40 to +85
C
Storage temperature range
Tstg
–55 to +150
C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings
and
the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: V
CC
= V
CC1
= V
CC2
= V
CC3
Note 2: V
CON
= V
CON12
= V
CON3
Note 3: When mounted on 30 mm × 35 mm × 0.4 mm FR4 substrate at Ta = 25°C (double-sided substrate: the
reverse side is the ground connection.)
Caution
This device is sensitive to electrostatic discharge. When handling this product, ensure that the environment is
protected against electrostatic discharge by using an earth strap, a conductive mat and an ionizer.
Weight: 0.012 g (typ.)