欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號(hào)： TE28F004BET120
廠商： INTEL CORP
元件分類(lèi)： DRAM
英文描述： 4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
中文描述： 512K X 8 FLASH 5V PROM, PDSO40
封裝： 20 X 10 MM, TSOP-40
文件頁(yè)數(shù)： 1/58頁(yè)
文件大小： 920K
代理商： TE28F004BET120
3 Volt Advanced Boot Block Flash
Memory
28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
Preliminary
Datasheet
Product Features
The 3 Volt Advanced Boot Block flash memory, manufactured on Intel’s latest 0.18
μ
m
technology, represents a feature-rich solution at overall lower system cost. The 3 Volt Advanced
Boot Block flash memory products in x16 will be available in 48-lead TSOP and 48-ball CSP
packages. The x8 option of this product family will only be available in 40-lead TSOP and 48-
ball μBGA* packages. Additional information on this product family can be obtained by
accessing Intel’s website at: http://www.intel.com/design/flash.
I
Flexible SmartVoltage Technology
—2.7 V–3.6 V Read/Program/Erase
—12 V V
PP
Fast Production Programming
I
2.7 V or 1.65 V I/O Option
—Reduces Overall System Power
I
High Performance
—2.7 V–3.6 V: 70 ns Max Access Time
I
Optimized Block Sizes
—Eight 8-KB Blocks for Data,Top or
Bottom Locations
—Up to One Hundred Twenty-Seven 64-
KB Blocks for Code
I
Block Locking
—V
CC
-Level Control through WP#
I
Low Power Consumption
—9 mA Typical Read Current
I
Absolute Hardware-Protection
—V
PP
= GND Option
—V
CC
Lockout Voltage
I
Extended Temperature Operation
—–40 °C to +85 °C
I
Automated Program and Block Erase
—Status Registers
I
Intel
Flash Data Integrator Software
—Flash Memory Manager
—System Interrupt Manager
—Supports Parameter Storage, Streaming
Data (e.g., Voice)
I
Extended Cycling Capability
—Minimum 100,000 Block Erase Cycles
Guaranteed
I
Automatic Power Savings Feature
—Typical I
CCS
after Bus Inactivity
I
Standard Surface Mount Packaging
—48-Ball CSP Packages
—40- and 48-Lead TSOP Packages
I
Density and Footprint Upgradeable for
common package
—4-, 8-, 16-, 32- and 64-Mbit Densities
I
ETOX VII (0.18
μ)
Flash Technology
—28F160/320/640B3xC
—4-, 8-, 16-, and 32-Mbit also exist on
ETOX V (0.4
μ)
and/or ETOX VI
(0.25
μ)
Flash Technology
I
x8 not recommended for new designs
I
4-Mbit density not recommended for new
designs
Order Number: 290580-012
October 2000
Notice:
This document contains preliminary information on new products in production. The
specifications are subject to change without notice. Verify with your local Intel sales office that
you have the latest datasheet before finalizing a design.
相關(guān)PDF資料
PDF描述
TE28F004BVT80 4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TE28F320 3 Volt Advanced Boot Block Flash Memory
TE28F640B3 3 Volt Advanced Boot Block Flash Memory
TE28F640B3BC100 3 Volt Advanced Boot Block Flash Memory
TE28F640B3BC90 3 Volt Advanced Boot Block Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TE28F004BVB80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TE28F004BVT80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TE28F004BX-B80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY
TE28F004BX-B90 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
TE28F004BX-T80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*
主站蜘蛛池模板： 佛坪县| 武隆县| 甘孜| 施秉县| 永新县| 麻栗坡县| 子长县| 繁峙县| 会同县| 黄冈市| 凤台县| 兰州市| 得荣县| 寿阳县| 仁布县| 福清市| 城步| 中卫市| 宜兴市| 延安市| 通化县| 邵阳市| 奎屯市| 辽源市| 庆元县| 巴塘县| 新兴县| 丁青县| 岫岩| 山西省| 南皮县| 苍南县| 峡江县| 黄山市| 安国市| 琼中| 象州县| 全南县| 黔西| 枝江市| 新昌县|