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參數(shù)資料
| 型號(hào)： | TFC561D |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類(lèi)： | 晶閘管 |
| 英文描述： | TO-220S Thyristor With Built-in Reverse Diode(內(nèi)置反向二極管的晶閘管（可控硅TO-220S封裝）) |
| 中文描述： | 430 A, 600 V, SCR |
| 封裝： | TO-220S, 3 PIN |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 32K |
| 代理商： | TFC561D |
I
Absolute Maximum Ratings
Parameter
Repetitive peak off-state voltage
Symbol
V
DRM
I
TRM
di/dt
I
FGM
P
GM
P
G(AV)
V
RGM
I
FRM
Tj
Tstg
Ratings
600
430
1200
2.0
5.0
0.5
5
240
–40 to +125
–40 to +125
Unit
V
A
A/
μ
s
A
W
W
V
A
°
C
°
C
Conditions
I
Features
G
Repetitive peak off-state voltage: V
DRM
=600V
G
Repetitive peak surge on-state current: I
TRM
=430A
G
Critical rate-of-rise of on-state current: di/dt=1200A /
μ
s
G
Gate trigger current: I
GT
=20mA max
G
With built-in reverse diode
24
V
D
G
1
G
2
C
L
Sample
Measurement circuit
Current waveform
(1cycle)
10.2
±
0.3
1.2
±
0.2
1.27
±
0.2
2.59
±
0.2
1.3
±
0.2
4.44
±
0.2
0.86
0.76
±
0.1
0.4
±
0.1
2.54
±
0.5
1
±
0
2.54
±
0.5
8
±
0
1
±
0
(
+
0.2
–
0.1
1
Tj=–40 to +125
°
C
, R
GK
=1k
V
D
430V, 100kcycle, Wp
=
1.3
μ
s, Ta
=
125
°
C
f 50Hz, duty 10%
f 50Hz, duty 10%
f 50Hz
V
D
430V, 100kcycle, Wp
=
1.3
μ
s, Ta
=
125
°
C
I
Electrical Characteristics
mA
V
mA
μ
A
mA
°
C/W
V
Parameter
Symbol
Ratings
typ
min
max
1.4
Unit
Conditions
V
V
V
TM
V
GT
I
GT
V
GD
I
H
V
F
I
DRM
(1)
I
DRM
(2)
Rth
10.0
1.4
4.0
1
100
2
0.1
20
1.5
(Tj=25
°
C)
I
T
=10A
V
D
=6V, R
L
=10
V
D
=6V, R
L
=10
V
D
=480V, Tj=125
°
C
R
G–K
=1k
, Tj=25
°
C
V
D
=V
DRM
, R
G–K
=1k
, Tj=25
°
C
V
D
=V
DRM
, R
G–K
=1k
, Tj=125
°
C
Junction to case
I
F
=10A
(Ta=25
°
C)
1
2
μ
s/div
TFC561D
TO-220S Thyristor with built-in reverse diode for HID lamp ignition
Weight: Approx. 1.5g
External Dimensions
(Unit: mm)
(1). Cathode(K)
(2). Anode(A)
(3). Gate(G)
(1) (2) (3)
+
0
–
0
Repetitive surge peak on-state current
Critical rate-of-rise of on-state current
Peak forward gate current
Peak gate power loss
Average gate power loss
Peak reverse gate voltage
Diode repetitive peak surge forward current
Junction temperature
Storage temperature
8
The surge current for T=10ms /cycle shall be applied 50 cycles successively, and an interval time shall follow to cool down the junction temperature of the device to 125
°
C. This process shall be repeated up to 100K cycles.
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Off-state current (1)
Off-state current (2)
Thermal resistance
Diode forward voltage
8
8
8
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