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參數資料
| 型號： | THN6501Z |
| 廠商： | Tachyonics CO,. LTD. |
| 英文描述： | NPN SiGe RF TRANSISTOR |
| 中文描述： | npn型硅鍺射頻晶體管 |
| 文件頁數： | 1/15頁 |
| 文件大小： | 242K |
| 代理商： | THN6501Z |
THN6501 Series
□
Application
LNA and wide band amplifier up to GHz range
□
Features
o Low Noise Figure
NF = 1.0 dB Typ. @ f = 1 GHz, V
CE
= 3V, I
C
= 7mA
o High Power Gain
MAG = 15 dB Typ. @ f = 1 GHz, V
CE
= 3V, I
C
= 7mA
o High Transition Frequency
f
T
= 9 GHz Typ. @ V
CE
= 3 V, I
C
= 30 mA
Pin Configuration
Pin No
1
2
3
Product
THN6501S
THN6501U
THN6501Z
THN6501E
□
h
FE
Classification
Marking
□
Absolute Maximum Ratings
Caution : ESD sensitive device
℃
℃
V
CBO
V
CEO
V
EBO
I
C
100
150
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
P
T
T
STG
T
J
150
-65 ~ 150
2.0
ⅹ
1.25, 1.0t
1.6
ⅹ
0.8, 0.8t
Package
SOT23
SOT323
Dimension
2.9
ⅹ
1.3, 1.2t
2.0
ⅹ
1.25, 1.0t
SOT343
SOT523
E
C
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
AB2
h
FE
125 to 300 80 to 160
AB1
Unit
mA
mW
V
V
V
20
12
2.5
Symbol
Ratings
Emitter
Collector
□
Available Package
Description
Base
Symbol
B
Unit : mm
NPN SiGe RF TRANSISTOR
SOT 523 Unit in mm
www.tachyonics.co.kr
- 1/15 -
Aug.-2005
Rev 2.0
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PDF描述 |
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| THN6501 | NPN SiGe RF TRANSISTOR |
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| THN6501U | NPN SiGe RF TRANSISTOR |
| THN6601B | NPN SiGe RF TRANSISTOR |
| THN6701B | NPN SiGe RF POWER TRANSISTOR |
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