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參數(shù)資料
| 型號： | TICP106 |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | SILICON CONTROLLED RECTIFIERS |
| 中文描述： | 矽控整流器 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 95K |
| 代理商： | TICP106 |
TICP106 SERIES
SILICON CONTROLLED RECTIFIERS
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
MARCH 1988 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
G
2 A Continuous On-State Current
G
15 A Surge-Current
G
Glass Passivated Wafer
G
400 V to 600 V Off-State Voltage
G
Max I
GT
of 200 μA
G
Package Options
PACKAGE
LP
LP with fomed leads
PACKING
Bulk
Tape and Reel
PART # SUFFIX
(None)
R
LP PACKAGE
(TOP VIEW)
MDC1AA
G
A
K
1
2
3
LP PACKAGE
WITH FORMED LEADS
(TOP VIEW)
MDC1AB
G
A
K
1
2
3
absolute maximum ratings
over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply when the gate-cathode resistance R
GK
= 1 k
.
2. These values apply for continuous dc operation with resistive load. Above 85°C derate linearly to zero at 110°C.
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
4. This value applies for a maximum averaging time of 20 ms.
RATING
SYMBOL
VALUE
UNIT
Repetitive peak off-state voltage (see Note 1)
TICP106D
TICP106M
TICP106D
TICP106M
V
DRM
400
600
400
600
2
15
0.2
0.3
V
Repetitive peak reverse voltage
V
RRM
V
Continuous on-state current at (or below) 85°C case temperature (see Note 2)
Surge on-state current (see Note 3)
Peak positive gate current (pulse width
≤
300
μ
s)
Average gate power dissipation (see Note 4)
Operating case temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
I
T(RMS)
I
TSM
I
GM
P
G(AV)
T
C
T
stg
T
L
A
A
A
W
°C
°C
°C
-40 to +110
-40 to +125
230
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TICP106D | SILICON CONTROLLED RECTIFIERS |
| TICP106M | SILICON CONTROLLED RECTIFIERS |
| TICP107 | SILICON CONTROLLED RECTIFIERS |
| TICP107D | SILICON CONTROLLED RECTIFIERS |
| TICP107M | SILICON CONTROLLED RECTIFIERS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TICP106D | 制造商:Bourns Inc 功能描述:THYRISTOR 2A 400V TO-92 |
| TICP106D-R-S | 功能描述:SCR 400V 2A SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TICP106D-S | 功能描述:SCR 400V 2A SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TICP106M | 制造商:Bourns Inc 功能描述:THYRISTOR 2A 600V TO-92 |
| TICP106M | 制造商:Bourns Inc 功能描述:THYRISTOR 2A 600V TO-92 |
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