- 您現在的位置：買賣IC網 > PDF目錄361450 > TICP107D (Power Innovations International, Inc.) SILICON CONTROLLED RECTIFIERS PDF資料下載
參數資料
| 型號： | TICP107D |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | SILICON CONTROLLED RECTIFIERS |
| 中文描述： | 矽控整流器 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 115K |
| 代理商： | TICP107D |
TICP107 SERIES
SILICON CONTROLLED RECTIFIERS
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
JANUARY 1999 - REVISED JUNE 2000
Copyright 2000, Power Innovations Limited, UK
G
1 A Continuous On-State Current
G
15 A Surge-Current
G
Glass Passivated Wafer
G
400 V to 600 V Off-State Voltage
G
I
GT
50 μA min, 200 μA max
G
di/dt 100A/μs
G
Package Options
PACKAGE
LP
LP with fomed leads
PACKING
Bulk
Tape and Reel
PART # SUFFIX
(None)
R
LP PACKAGE
(TOP VIEW)
MDC1AA
G
A
K
1
2
3
LP PACKAGE
WITH FORMED LEADS
(TOP VIEW)
MDC1AB
G
A
K
1
2
3
absolute maximum ratings over operating junction temperature (unless otherwise noted)
NOTES: 1. These values apply when the gate-cathode resistance R
GK
= 1 k
.
2. These values apply for continuous dc operation with resistive load.
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
4. Rate of rise of on-state current after triggering with I
G
= 10mA, di
G
/dt = 1A/μs.
RATING
SYMBOL
VALUE
UNIT
Repetitive peak off-state voltage (see Note 1)
TICP107D
TICP107M
TICP107D
TICP107M
V
DRM
400
600
400
600
1
15
100
0.2
V
Repetitive peak reverse voltage
V
RRM
V
Continuous on-state current at (or below) 25°C ambient temperature (see Note 2)
Surge on-state current at (or below) 25°C ambient temperature (see Note 3)
Critical rate of rise of on-state current at 110°C (see Note 4)
Peak positive gate current (pulse width
≤
300
μ
s)
Junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
I
T(RMS)
I
TSM
di/dt
I
GM
T
J
T
stg
T
L
A
A
A/μs
A
°C
°C
°C
-40 to +110
-40 to +125
230
相關PDF資料 |
PDF描述 |
|---|---|
| TICP107M | SILICON CONTROLLED RECTIFIERS |
| TICP206 | SILICON TRIACS |
| TICP206D | SILICON TRIACS |
| TICP206M | SILICON TRIACS |
| TIL111 | PHOTOTRANSISTOR OPTOISOLATOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TICP107M | 制造商:POINN 制造商全稱:Power Innovations Ltd 功能描述:SILICON CONTROLLED RECTIFIERS |
| TICP107MS | 制造商:Bourns Inc 功能描述: |
| TICP206 | 制造商:POINN 制造商全稱:Power Innovations Ltd 功能描述:SILICON TRIACS |
| TICP206D | 制造商:Bourns Inc 功能描述:TRIAC 1.5A 400V TO-92 |
| TICP206D | 制造商:Bourns Inc 功能描述:TRIAC 1.5A 400V TO-92 |
發布緊急采購，3分鐘左右您將得到回復。