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參數資料
| 型號： | TIM1414-30L |
| 廠商： | Toshiba Corporation |
| 英文描述： | MICROWAVE POWER GaAs FET |
| 中文描述： | 微波功率GaAs場效應管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 58K |
| 代理商： | TIM1414-30L |
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM1414-30L
TECHNICAL DATA
Rev. Jan. 2007
FEAT URES
n
HIGH POWER
n
BROAD BAND INTERNALLY MATCHED FET
P1dB=45.0dBm at 14.0GHz to 14.5GHz
n
HIGH GAIN
n
HERMETICALLY SEALED PACKAGE
G1dB=5.5dB at 14.0GHz to 14.5GHz
n
LOW INTERMODULATION DISTORTION
IM3(Min.)=
25dBc at Po=38.0dBm Single Carrier Level
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
°
C )
CHARACTERISTICS
SYMBOL
P
1dB
CONDITIONS
UNIT
MIN. TYP. MAX.
Output Power at 1dB Gain
Compression Point
dBm
44.0
45.0
Power Gain at 1dB Gain
Compression Point
G
1dB
dB
4.5
5.5
Drain Current
Power Added Efficiency
I
DS1
η
add
IM
3
A
%
-25
10.0
23
11.0
VDS
= 10
V
IDSset
7.0A
f
= 14.0 to 14.5GHz
3rd Order Intermodulation
Distortion
dBc
Drain Current
Channel Temperature Rise
I
DS2
Tch
Two-Tone Test
Po= 38.0dBm
(Single Carrier Level)
(VDS X IDS +Pin-P1dB)
X Rth(c-c)
A
°
C
9.0
10.1
100
Recommended gate resistance(Rg) : Rg= 28
W
MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25
°
C )
CHARACTERISTICS
Transconductance
SYMBOL
gm
CONDITIONS
V
DS
=
3V
I
DS
= 9.6A
V
GSoff
V
DS
=
3V
I
DS
= 290mA
I
DSS
V
DS
=
3V
V
GS
= 0V
V
GSO
I
GS
= -290
μ
A
UNIT
S
MIN. TYP. MAX.
5.5
Pinch-off Voltage
V
-0.7
-2.0
-4.5
Saturated Drain Current
A
20.0
Gate-Source Breakdown
Voltage
Thermal Resistance
V
-5
R
th(c-c)
Channel to Case
°
C/W
1.1
u
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefore advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
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