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參數資料
| 型號： | TIM5359-4UL |
| 廠商： | Toshiba Corporation |
| 英文描述： | MICROWAVE POWER GaAs FET |
| 中文描述： | 微波功率GaAs場效應管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 206K |
| 代理商： | TIM5359-4UL |
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM5359-4UL
TECHNICAL DATA
FEAT URES
HIGH POWER
BROAD BAND INTERNALLY MATCHED FET
P1dB=36.5dBm at 5.3GHz to 5.9GHz
HIGH GAIN
HERMETICALLY SEALED PACKAGE
G1dB=10.5dB at 5.3GHz to 5.9GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
°
C )
CHARACTERISTICS
SYMBOL
P
1dB
CONDITIONS
UNIT
MIN. TYP.
MAX.
Output Power at 1dB Gain
Compression Point
dBm
35.5
36.5
G
1dB
Power Gain at 1dB Gain
Compression Point
dB
9.5
10.5
Drain Current
I
DS1
Δ
G
η
add
A
-44
1.1
37
1.3
±
0.6
V
DS
= 10
V
f
= 5.3 to 5.9GHz
Gain Flatness
dB
Power Added Efficiency
%
3rd Order Intermodulation
Distortion
IM
3
dBc
-47
Two-Tone Test
Po= 25.5dBm
Drain Current
I
DS2
Δ
Tch
A
°
C
1.1
1.3
(Single Carrier Level)
(VDS X IDS +Pin-
P1dB
)
X Rth(c-c)
Channel Temperature Rise
80
Recommended gate resistance(Rg) : Rg= 150
Ω
(MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25
°
C )
CHARACTERISTICS
Transconductance
SYMBOL
gm
CONDITIONS
V
DS
=
3V
I
DS
= 1.5A
V
GSoff
V
DS
=
3V
I
DS
= 15mA
I
DSS
V
DS
=
3V
V
GS
= 0V
I
GS
= -50
μ
A
V
GSO
UNIT
mS
MIN. TYP.
MAX.
900
Pinch-off Voltage
V
-1.0
-2.5
-4.0
Saturated Drain Current
A
2.6
Gate-Source Breakdown
Voltage
V
-5
R
th(c-c)
°
C/W
Thermal Resistance
Channel to Case
4.5
6.0
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Jun. 2006
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