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參數資料
| 型號： | TIM7785-12UL |
| 廠商： | Toshiba Corporation |
| 英文描述： | BROAD BAND INTERNALLY MATCHED FET |
| 中文描述： | 寬帶內部匹配場效應管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 55K |
| 代理商： | TIM7785-12UL |
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM7785-12UL
TECHNICAL DATA
FEAT URES
n
HIGH POWER
P1dB=41.5dBm at 7.7GHz to 8.5GHz
n
HIGH GAIN
G1dB=8.5dB at 7.7GHz to 8.5GHz
n
BROAD BAND INTERNALLY MATCHED FET
n
HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
°
C )
CHARACTERISTICS
SYMBOL
P
1dB
CONDITIONS
UNIT
MIN. TYP. MAX.
Output Power at 1dB Gain
Compression Point
dBm
40.5
41.5
Power Gain at 1dB Gain
Compression Point
G
1dB
dB
7.5
8.5
Drain Current
Gain Flatness
I
DS1
G
η
add
IM
3
A
dB
-44
3.2
38
3.8
±
0.6
Power Added Efficiency
V
DS
= 10
V
f
= 7.5 to 8.5GHz
%
3rd Order Intermodulation
Distortion
Drain Current
dBc
-47
I
DS2
Tch
Two Tone Test
Po=30.5dBm
(Single Carrier Level)
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
A
3.2
3.8
Channel Temperature Rise
°
C
80
Recommended gate resistance(Rg) : Rg= 100
W
MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25
°
C )
CHARACTERISTICS
Transconductance
SYMBOL
gm
CONDITIONS
V
DS
=
3V
I
DS
= 4.0A
V
GSoff
V
DS
=
3V
I
DS
= 40mA
I
DSS
V
DS
=
3V
V
GS
= 0V
V
GSO
I
GS
= -140
μ
A
UNIT
mS
MIN. TYP. MAX.
2500
Pinch-off Voltage
V
-1.0
-2.5
-4.0
Saturated Drain Current
A
7.2
Gate-Source Breakdown
Voltage
Thermal Resistance
V
-5
R
th(c-c)
Channel to Case
°
C/W
2.0
2.4
u
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Oct. 2006
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相關代理商/技術參數 |
參數描述 |
|---|---|
| TIM7785-12UL_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:HIGH POWER P1dB=41.5dBm at 7.7GHz to 8.5GHz |
| TIM7785-16 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:MICROWAVE POWER GAAS FET |
| TIM7785-16EL | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED,8.5 GHZ, 75 W - Trays |
| TIM7785-16SL | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED,8.5 GHZ, 75 W - Trays |
| TIM7785-16UL | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED,8.5 GHZ, 75 W - Trays |
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