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參數資料
| 型號： | TIP117 |
| 廠商： | MOSPEC SEMICONDUCTOR CORP. |
| 英文描述： | POWER TRANSISTORS(2.0A,60-100V,50W) |
| 中文描述： | 功率晶體管（2.0安培,60 - 100V的，50瓦） |
| 文件頁數： | 1/2頁 |
| 文件大小： | 75K |
| 代理商： | TIP117 |
1999. 11. 16
1/2
SEMICONDUCTOR
TECHNICAL DATA
TIP117
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES
High DC Current Gain.
: h
FE
=1000(Min.),
V
CE
=-4V, I
C
=-1A.
Low Collector-Emitter Saturation Voltage.
Complementary to TIP112.
MAXIMUM RATING (Ta=25
)
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
MILLIMETERS
10.30 MAX
15.30 MAX
0.80
Φ
3.60 0.20
3.00
6.70 MAX
13.60 0.50
5.60 MAX
1.37 MAX
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
TO-220AB
0.50
1.50 MAX
2.54
4.70 MAX
2.60
1.50 MAX
1.50
9.50 0.20
8.00 0.20
2.90 MAX
A
R
S
E
M
M
1
2
3
F
B
G
H
L
C
K
J
O
N
P
D
Q
C
T
+
+
+
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-100
V
Collector-Emitter Voltage
V
CEO
-100
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
DC
I
C
-2
A
Pulse
I
CP
-4
Base Current
DC
I
B
-50
mA
Collector Power
Dissipation
Ta=25
P
C
2
W
Tc=25
50
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-65
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CEO
V
CE
=-50V, I
B
=0
-
-
-2
mA
I
CBO
V
CB
=-100V, I
E
=0
-
-
-1
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-2
mA
DC Current Gain
h
FE
V
CE
=-4V, I
C
=-1A
1000
-
-
V
CE
=-4V, I
C
=-2A
500
-
-
Collector-Emitter Sustaining Voltage
V
CEO(SUS)
I
C
=-30mA, I
B
=0
-100
-
-
V
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-2A, I
B
=-8mA
-
-
-2.5
V
Base-Emitter On Voltage
V
BE(ON)
V
CE
=-4V, I
C
=-2A
-
-
-2.8
V
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=0.1MHz
-
-
200
pF
C
B
E
R
10k
0.6k
R
1
2
=
=
EQUIVALENT CIRCUIT
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