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參數資料
| 型號： | TIP141T |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt Resistor）(NPN硅外延達林頓晶體管（內置基極-射極分流電阻單片結構）) |
| 中文描述： | 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 101K |
| 代理商： | TIP141T |
2000 Fairchild Semiconductor International
Rev. B, February 2000
T
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
V
CBO
Collector-Base Voltage : TIP140T
: TIP141T
: TIP142T
Collector-Emitter Voltage : TIP140T
: TIP141T
: TIP142T
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
Collector Current (Pulse)
I
B
Base Current (DC)
P
C
Collector Dissipation (T
C
=5
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
V
CEO
(sus)
Collector-Emitter Sustaining Voltage
Value
60
80
100
60
80
100
5
10
15
0.5
80
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
°
C
°
C
V
CEO
Test Condition
Min.
Typ.
Max.
Units
: TIP140T
: TIP141T
: TIP142T
I
C
= 30mA, I
B
= 0
60
80
100
V
V
V
I
CEO
Collector Cut-off Current
: TIP140T
: TIP141T
: TIP142T
V
CE
= 30V, I
B
= 0
V
CE
= 40V, I
B
= 0
V
CE
= 50V, I
B
= 0
2
2
2
mA
mA
mA
I
CBO
Collector Cut-off Current
: TIP140T
: TIP141T
: TIP142T
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CB
= 100V, I
E
= 0
V
BE
= 5V, I
C
= 0
V
CE
= 4V, I
C
= 5A
V
CE
=4V, I
C
= 10A
I
C
= 5A, I
B
= 10mA
I
C
= 10A, I
B
= 40mA
I
C
= 10A, I
B
= 40mA
V
CE
= 4V, I
C
= 10A
V
CC
= 30V, I
C
= 5A
I
B1
= 20mA
I
B2
= -20mA
R
L
= 6
1
1
1
2
mA
mA
mA
mA
mA
I
EBO
h
FE
Emitter Cut-off Current
DC Current Gain
1000
500
V
CE
(sat)
Collector-Emitter Saturation Voltage
2
3
V
V
V
V
μ
s
μ
s
μ
s
μ
s
V
BE
(sat)
V
BE
(on)
t
D
t
R
t
STG
t
F
Base-Emitter Saturation Voltage
Base-Emitter ON Voltage
Delay Time
Rise Time
Storage Time
Fall Time
3.5
3
0.15
0.55
2.5
2.5
TIP140T/141T/142T
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
High DC Current Gain : h
FE
= 1000 @ V
CE
= 4V, I
C
= 5A (Min.)
Industrial Use
Complement to TIP145T/146T/147T
1.Base 2.Collector 3.Emitter
TO-220
1
Equivalent Circuit
B
E
C
R1
R2
相關PDF資料 |
PDF描述 |
|---|---|
| TIP140T | NPN Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt Resistor）(NPN硅外延達林頓晶體管（內置基極-射極分流電阻單片結構）) |
| TIP142T | NPN Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt Resistor）(NPN硅外延達林頓晶體管（內置基極-射極分流電阻單片結構）) |
| TIP146T | PNP Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt Resistor）(PNP硅外延達林頓晶體管（內置基極-射極分流電阻單片結構）) |
| TIP145T | PNP Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt Resistor）(PNP硅外延達林頓晶體管（內置基極-射極分流電阻單片結構）) |
| TIP147T | PNP Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt Resistor）(PNP硅外延達林頓晶體管（內置基極-射極分流電阻單片結構）) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TIP141T_09 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Epitaxial Silicon Darlington Transistor |
| TIP141TTU | 功能描述:達林頓晶體管 RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| TIP141TU | 功能描述:達林頓晶體管 RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| TIP142 | 功能描述:達林頓晶體管 NPN Power Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| TIP-142 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
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