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參數資料
| 型號： | TIP146T |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt Resistor）(PNP硅外延達林頓晶體管（內置基極-射極分流電阻單片結構）) |
| 中文描述： | 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220 |
| 封裝： | TO-220, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 101K |
| 代理商： | TIP146T |
2000 Fairchild Semiconductor International
Rev. B, February 2000
T
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
V
CBO
Collector-Base Voltage : TIP145T
: TIP146T
: TIP147T
Collector-Emitter Voltage : TIP145T
: TIP146T
: TIP147T
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
Collector Current (Pulse)
I
B
Base Current (DC)
P
C
Collector Dissipation (T
C
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
V
CEO
(sus)
Collector-Emitter Sustaining Voltage
Value
- 60
- 80
- 100
- 60
- 80
- 100
- 5
- 10
- 15
- 0.5
80
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
°
C
°
C
V
CEO
Test Condition
Min.
- 60
- 80
- 100
Typ.
Max.
Units
: TIP145T
: TIP146T
: TIP147T
I
C
= - 30mA, I
B
= 0
V
V
V
I
CEO
Collector Cut-off Current
: TIP145T
: TIP146T
: TIP147T
V
CE
= - 30V, I
B
= 0
V
CE
= - 40V, I
B
= 0
V
CE
= - 50V, I
B
= 0
- 2
- 2
- 2
mA
mA
mA
I
CBO
Collector Cut-off Current
: TIP145T
: TIP146T
: TIP147T
V
CB
= - 60V, I
E
= 0
V
CB
= - 80V, I
E
= 0
V
CB
= - 100V, I
E
= 0
V
BE
= - 5V, I
C
= 0
V
CE
= - 4V, I
C
= - 5A
V
CE
= - 4V, I
C
= - 10A
I
C
= - 5A, I
B
= - 10mA
I
C
= - 10A, I
B
= - 40mA
I
C
= - 10A, I
B
= - 40mA
V
CE
= - 4V, I
C
= - 10A
V
CC
= - 30V, I
C
= - 5A
I
B1
= -20mA, I
B2
= 20mA
R
L
= 6
- 1
- 1
- 1
- 2
mA
mA
mA
mA
I
EBO
h
FE
Emitter Cut-off Current
DC Current Gain
1000
500
V
CE
(sat)
Collector-Emitter Saturation Voltage
- 2
- 3
- 3.5
- 3
V
V
V
V
μ
s
μ
s
μ
s
μ
s
V
BE
(sat)
V
BE
(on)
t
D
t
R
t
STG
t
F
Base-Emitter Saturation Voltage
Base-Emitter ON Voltage
Delay Time
Rise Time
Storage Time
Fall Time
0.15
0.55
2.5
2.5
TIP145T/146T/147T
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
High DC Current Gain : h
FE
= 1000@ V
CE
= - 4V, I
C
= - 5A (Min.)
Industrial Use
Complement to TIP140T/141T/142T
1.Base 2.Collector 3.Emitter
TO-220
1
Equivalent Circuit
B
E
C
R1
R2
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PDF描述 |
|---|---|
| TIP145T | PNP Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt Resistor）(PNP硅外延達林頓晶體管（內置基極-射極分流電阻單片結構）) |
| TIP147T | PNP Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt Resistor）(PNP硅外延達林頓晶體管（內置基極-射極分流電阻單片結構）) |
| TIP29B | 1 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80-100 VOLTS 30 WATTS |
| TIP3055 | Complementary Silicon Power Transistors(互補硅功率晶體管) |
| TIP3055 | POWER TRANSISTORS COMPLEMENTARY SILICON |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TIP146TTU | 功能描述:達林頓晶體管 RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| TIP146TU | 功能描述:達林頓晶體管 PNP Epitaxial Sil Darl RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| TIP147 | 功能描述:達林頓晶體管 PNP Power Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| TIP147 | 制造商:Bourns Inc 功能描述:TRANSISTOR DARLINGTON SOT-93 |
| TIP147F | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:TO-3P Fully Isolated Plastic Package Transistor CDIL |
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