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參數資料
| 型號： | TISP3072F3 |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS |
| 中文描述： | 雙對稱瞬態電壓抑制器 |
| 文件頁數： | 1/16頁 |
| 文件大小： | 415K |
| 代理商： | TISP3072F3 |
TISP3072F3, TISP3082F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
Copyright 1997, Power Innovations Limited, UK
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
G
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
G
Planar Passivated Junctions
Low Off-State Current
< 10 μA
G
Rated for International Surge Wave Shapes
G
Surface Mount and Through-Hole Options
G
UL Recognized, E132482
description
These low voltage dual symmetrical transient
voltage suppressor devices are designed to
protect ISDN applications against transients
caused by lightning strikes and a.c. power lines.
Offered in two voltage variants to meet battery
and protection requirements they are guaranteed
to suppress and withstand the listed international
lightning surges in both polarities. Transients are
initially clipped by breakdown clamping until the
voltage rises to the breakover level, which
causes the device to crowbar. The high crowbar
holding current prevents d.c. latchup as the
current subsides.
DEVICE
V
DRM
V
58
66
V
(BO)
V
72
82
‘3072F3
‘3082F3
WAVE SHAPE
STANDARD
I
TSP
A
80
70
60
45
38
50
50
50
35
2/10 μs
8/20 μs
10/160 μs
10/560 μs
0.5/700 μs
FCC Part 68
ANSI C62.41
FCC Part 68
FCC Part 68
RLM 88
FTZ R12
VDE 0433
CCITT IX K17/K20
REA PE-60
10/700 μs
10/1000 μs
PACKAGE
Small-outline
Small-outline taped
and reeled
Plastic DIP
Single-in-line
PART # SUFFIX
D
DR
P
SL
These
fabricated in ion-implanted planar structures to
ensure precise and matched breakover control
and are virtually transparent to the system in
normal operation
monolithic
protection
devices
are
device symbol
G
T
R
Terminals T, R and G correspond to the
alternative line designators of A, B and C
SD3XAA
D PACKAGE
(TOP VIEW)
P PACKAGE
(TOP VIEW)
SL PACKAGE
(TOP VIEW)
MDXXAE
1
2
3
4
5
6
7
8
G
G
G
G
NC
T
R
NC
NC - No internal connection
1
2
3
4
5
6
7
8
R
G
T
G
T
G
G
R
Specified T terminal ratings require connection of pins 1 and 8.
Specified R terminal ratings require connection of pins 4 and 5.
MDXXAF
1
2
3
T
G
R
MDXXAG
MD23AA
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相關代理商/技術參數 |
參數描述 |
|---|---|
| TISP3072F3D | 功能描述:硅對稱二端開關元件 Low Voltage Dual Bidirectional RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態電流: 額定重復關閉狀態電壓 VDRM:25 V 關閉狀態漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態電壓:5 V 關閉狀態電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP3072F3DR | 功能描述:硅對稱二端開關元件 Low Voltage Dual Bidirectional RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態電流: 額定重復關閉狀態電壓 VDRM:25 V 關閉狀態漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態電壓:5 V 關閉狀態電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP3072F3DR-S | 功能描述:硅對稱二端開關元件 Low Voltage Dual Bidirectional RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態電流: 額定重復關閉狀態電壓 VDRM:25 V 關閉狀態漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態電壓:5 V 關閉狀態電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP3072F3D-S | 功能描述:硅對稱二端開關元件 Low Voltage Dual Bidirectional RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態電流: 額定重復關閉狀態電壓 VDRM:25 V 關閉狀態漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態電壓:5 V 關閉狀態電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP3072F3P | 功能描述:硅對稱二端開關元件 Low Voltage Dual Bidirectional RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態電流: 額定重復關閉狀態電壓 VDRM:25 V 關閉狀態漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態電壓:5 V 關閉狀態電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
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