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參數資料
| 型號： | TISP8201MDR |
| 廠商： | BOURNS INC |
| 元件分類： | 保護電路 |
| 英文描述： | COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION |
| 中文描述： | TELECOM, SURGE PROTECTION CIRCUIT, PDSO8 |
| 封裝： | PLASTIC, MS-012, SO-8 |
| 文件頁數： | 1/13頁 |
| 文件大小： | 335K |
| 代理商： | TISP8201MDR |
MAY 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP8200M & TISP8201M
TISP8200M, BUFFERED P-GATE SCR DUAL
TISP8201M, BUFFERED N-GATE SCR DUAL
COMPLEMENTARY BUFFERED-GATE SCRS
FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION
TISP8200M Device Symbol
High Performance Protection for SLICs with +ve & -ve Battery
Supplies
TISP8200M, Negative Overvoltage Protector
– Wide 0 to -90 V Programming Range
– Low 5 mA max. Gate Triggering Current
– High -150 mA min. Holding Current
TISP8201M, Positive Overvoltage Protector
– Wide 0 to +90 V Programming Range
– Low -5 mA max. Gate Triggering Current
– 20 mA min. Holding Current
Rated for International Surge Wave Shapes
How To Order
TISP8200M D Package (Top View)
Description
The TISP8200M/TISP8201M combination has been designed to protect
dual polarity supply rail monolithic SLICs (Subscriber Line Interface
Circuits) against overvoltages on the telephone line caused by lightning,
a.c. power contact and induction. Protection against negative
overvoltages is given by the TISP8200M. Protection against positive
overvoltages is given by the TISP8201M. Both parts are in 8-pin small-
outline surface mount packages.
The TISP8200M has an array of two buffered P-gate SCRs with a
common anode connection. Each SCR cathode and gate has a separate
terminal connection. The NPN buffer transistors reduce the gate supply
current.
In use, the cathodes of the TISP8200M SCRs are connected to the two
conductors of the POTS line (see applications information). The gates are
connected to the appropriate negative voltage battery feed of the SLIC
driving the line conductor pair. This ensures that the TISP8200M
protection voltage tracks the SLIC negative supply voltage. The anode of
the TISP8200M is connected to the SLIC common.
Surface Mount Small-Outline Package
1
2
3
4
5
6
7
8
MDRXAKC
NC - No internal connection
G2
A
A
NC
G1
K1
K2
NC
SDRXAJB
A
A
G1
G2
K1
K2
TISP8201M Device Symbol
TISP8201M D Package (Top View)
1
2
3
4
5
6
7
8
MDRXALC
NC - No internal connection
G2
K
K
NC
G1
A1
A2
NC
SDRXAKB
A1
A2
K
K
G1
G2
Wave Shape
Standard
I
tsp
A
2/10
μ
s
10/700
μ
s
10/1000
μ
s
Telcordia GR-1089-CORE
ITU-T K.20,K.21 & K.45
Telcordia GR-1089-CORE
210
70
45
............................................ UL Recognized Components
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Device
TISP8200M
TISP8201M
Package
Carrier
D (8-pin Small-Outline)
D (8-pin Small-Outline)
Embossed Tape Reeled
Embossed Tape Reeled
TISP8200MDR
TISP8201MDR
TISP8200MDR-S
TISP8201MDR-S
For Standard
Termination Finish
Order As
For Lead Free
Termination Finish
Order As
*RHAVALABE
VRSONS
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相關代理商/技術參數 |
參數描述 |
|---|---|
| TISP8201MDR-S | 功能描述:SCR PROTECTOR - BUFFERED N-GATE PROG. PROT. RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP8210MDR-S | 功能描述:SCR -150mA High Hold current RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP8211MDR-S | 功能描述:SCR +20mA High Hold current RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP8250D | 制造商:Bourns Inc 功能描述: |
| TISP8250DR | 制造商:Bourns Inc 功能描述: |
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