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參數資料
| 型號： | TISP8210MDR-S |
| 廠商： | BOURNS INC |
| 元件分類： | 保護電路 |
| 英文描述： | COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION |
| 中文描述： | TELECOM, SURGE PROTECTION CIRCUIT, PDSO8 |
| 封裝： | ROHS COMPLIANT, SOIC-8 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 420K |
| 代理商： | TISP8210MDR-S |
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
JANUARY 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP821xMD Overvoltage Protectors
TISP8210MD BUFFERED P-GATE SCR DUAL
TISP8211MD BUFFERED N-GATE SCR DUAL
COMPLEMENTARY BUFFERED-GATE SCRS
FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION
TISP8210MD 8-SOIC Package (Top View)
*RHSCOMPIAN
High Performance Protection for SLICs with +ve & -ve
Battery Supplies
TISP8210MD Negative Overvoltage Protector
– Wide 0 to -110 V Programming Range
– Low +5 mA Max. Gate Triggering Current
– High -150 mA Min. Holding Current
TISP8211MD Positive Overvoltage Protector
– Wide 0 to +110 V Programming Range
– Low -5 mA Max. Gate Triggering Current
– +20 mA Min. Holding Current
Rated for International Surge Wave Shapes
Wave Shape
Standard
I
PPSM
A
167
70
60
2/10
10/700
10/1000
GR-1089-CORE
ITU-T K.20/21/45
GR-1089-CORE
1
2
3
4
5
6
7
8
MDRXAKC
NC - No internal connection
G2
A
A
NC
G1
K1
K2
NC
TISP8210MD Device Symbol
SDRXAJB
A
A
G1
G2
K1
K2
Circuit Application Diagram
TISP8211MD 8-SOIC Package (Top View)
1
2
3
4
5
6
7
8
MDRXALC
NC - No internal connection
G2
K
K
NC
G1
A1
A2
NC
TISP8211MD Device Symbol
SDRXAKB
A1
A2
K
K
G1
G2
- V
BAT
SLIC
PROTECTION
TISP8211MD
AI-TISP8-003-a
Tip
Ring
C2
100 nF
+V
BAT
C1
100 nF
TISP8210MD
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相關代理商/技術參數 |
參數描述 |
|---|---|
| TISP8211MDR-S | 功能描述:SCR +20mA High Hold current RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP8250D | 制造商:Bourns Inc 功能描述: |
| TISP8250DR | 制造商:Bourns Inc 功能描述: |
| TISP8250DR-S | 功能描述:SCR PROTECTOR - GATED UNIDIRECTIONAL RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP83121D | 功能描述:SCR Dual Gate Unidirectional RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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