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參數資料
型號: TM124BBK32-80
廠商: Texas Instruments, Inc.
英文描述: DYNAMIC RAM MODULE
中文描述: 動態隨機存儲器模塊
文件頁數: 1/11頁
文件大小: 151K
代理商: TM124BBK32-80
TM124BBK32, TM124BBK32S 1048576 BY 32-BIT
TM248CBK32, TM248CBK32S 2097152 BY 32-BIT
DYNAMIC RAMMODULE
SMMS132D – JANUARY 1991 – REVISED JUNE 1995
1
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
Organization
TM124BBK32 . . . 1 048 576
×
32
TM248CBK32 . . . 2 097 152
×
32
Single 5-V Power Supply (
±
10 % Tolerance)
72-pin Single In-Line Memory Module
(SIMM) for Use With Sockets
TM124BBK32-Utilizes Eight 4-Megabit
DRAMs in Plastic Small-Outline J-Lead
(SOJ) Packages
TM248CBK32-Utilizes Sixteen 4-Megabit
DRAMs in Plastic Small-Outline J-Lead
(SOJ) Packages
Distributed Refresh Period
16 ms (1024 Cycles)
All Inputs, Outputs, Clocks Fully TTL
Compatible
3-State Output
Common CAS Control for Eight Common
Data-In and Data-Out Lines, In Four Blocks
Presence Detect
Performance Ranges:
ACCESS
TIME
tRAC
ACCESS
TIME
tCAC
READ
OR
WRITE
CYCLE
(MIN)
110 ns
130 ns
150 ns
110 ns
130 ns
150 ns
(MAX)
60 ns
70 ns
80 ns
60 ns
70 ns
80 ns
(MAX)
15 ns
18 ns
20 ns
15 ns
18 ns
20 ns
TM124BBK32-60
TM124BBK32-70
TM124BBK32-80
TM248CBK32-60
TM248CBK32-70
TM248CBK32-80
Low Power Dissipation
Operating Free-Air-Temperature Range
0
°
C to 70
°
C
Gold-Tabbed Versions Available:
– TM124BBK32
– TM248CBK32
Tin-Lead (Solder) Tabbed Versions
Available:
– TM124BBK32S
– TM248CBK32S
description
TM124BBK32
The TM124BBK32 is a dynamic random-access memory (DRAM) organized as four times 1048576
×
8 in a
72-pin leadless single in-line memory module (SIMM). The SIMM is composed of eight TMS44400, 1048576
×
4-bit DRAMs, each in 20/26-lead plastic SOJ packages, mounted on a substrate together with decoupling
capacitors. Each TMS44400 is described in the TMS44400 data sheet.
The TM124BBK32 is available in the single-sided BK leadless module for use with sockets.
The TM124BBK32 features RAS access times of 60 ns, 70 ns and 80 ns. This device is rated for operation from
0
°
C to 70
°
C
TM248CBK32
The TM248CBK32 is a dynamic random-access memory organized as four times 2097152
×
8 in a 72-pin
leadless SIMM. The SIMM is composed of sixteen TMS44400, 1048576
×
4-bit dynamic RAMs, each in
20/26-lead plastic SOJ packages SOJs, mounted on a substrate together with decoupling capacitors. Each
TMS44400 is described in the TMS44400 data sheet.
The TM248CBK32 is available in the double-sided BK leadless module for use with sockets.
The TM248CBK32 features RAS access times of 60 ns, 70 ns and 80 ns. This device is rated for operation from
0
°
C to 70
°
C
operation
TM124BBK32
The TM124BBK32 operates as eight TMS44400DJs connected as shown in the functional block diagram. Refer
to the TMS44400 data sheet for details of operation. The common I/O feature of the TM124BBK32 dictates the
use of early write cycles to prevent contention on D and Q.
Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.
Copyright
1995, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
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