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參數(shù)資料
| 型號： | TM893GBK32S-80 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | EXTENDED DATA OUT DYNAMIC RAM MODULES |
| 中文描述： | 擴展數(shù)據(jù)輸出動態(tài)隨機存儲器模塊 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 170K |
| 代理商： | TM893GBK32S-80 |
TM497FBK32, TM497FBK32S 4194304 BY 32-BIT
TM893GBK32, TM893GBK32S 8388608 BY 32-BIT
EXTENDED DATA OUT DYNAMIC RAMMODULES
SMMS668 – NOVEMBER 1996
1
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
Organization
– TM497FBK32/S: 4 194 304 x 32
– TM893GBK32/S: 8 388 608 x 32
Single 5-V Power Supply (
±
10% Tolerance)
72-Pin Single-In-Line Memory Module
(SIMM) for Use With Sockets
TM497FBK32/S – Uses Eight 16M-Bit
Dynamic Random-Access Memories
(DRAMs) in Plastic Small-Outline J-Lead
(SOJ) Packages
TM893GBK32/S – Uses Sixteen 16M-Bit
DRAMs in Plastic SOJ Packages
Long Refresh Period
32 ms (2 048 Cycles)
All Inputs, Outputs, Clocks Fully
TTL-Compatible
3-State Output
Common CAS Control for Eight Common
Data-In and Data-Out Lines in Four Blocks
Extended Data Out (EDO) Operation With
CAS-Before-RAS (CBR), RAS-Only, and
Hidden Refresh
Presence Detect
Performance Ranges:
ACCESS ACCESS ACCESS
TIME
TIME
tRAC
tAA
(MAX)
(MAX)
30 ns
35 ns
40 ns
EDO
CYCLE
tHPC
(MIN)
25 ns
30 ns
35 ns
TIME
tCAC
(MAX)
15 ns
18 ns
20 ns
’497FBK32/S-60 60 ns
’497FBK32/S-70 70 ns
’497FBK32/S-80 80 ns
’893GBK32/S-60 60 ns
’893GBK32/S-70 70 ns
’893GBK32/S-80 80 ns
Low Power Dissipation
Operating Free-Air Temperature Range
0
°
C to 70
°
C
Gold-Tabbed Version Available:
TM497FBK32, TM893GBK32
Tin-Lead (Solder-) Tabbed Version
Available: TM497FBK32S, TM893GBK32S
30 ns
35 ns
40 ns
15 ns
18 ns
20 ns
25 ns
30 ns
35 ns
description
The TM497FBK32 is a 16M-byte dynamic random-access memory (DRAM) organized as four times
4194304
×
8 bits in a 72-pin leadless single-in-line memory module (SIMM). The SIMM is composed of eight
TMS417409DJ, 4194304
×
4-bit DRAMs, each in 24/26-lead plastic small-outline J-lead (SOJ) packages
mounted on a substrate with decoupling capacitors. The TMS417409DJ is described in the TMS416409,
TMS417409 data sheet (literature number SMKS884).
The TM497FBK32 SIMM is available in the single-sided BK leadless module for use with sockets. The
TM497FBK32 features RAS access times of 60 ns, 70 ns, and 80 ns. This device is characterized for operation
from 0
°
C to 70
°
C.
The TM893GBK32/S is a 32M-byte DRAM organized as four times 8388608
×
8 bits in a 72-pin leadless SIMM.
The SIMM is composed of sixteen TMS417409DJ 4194304
×
4-bit DRAMs.
The TM893GBK32/S SIMM is available in the double-sided BK leadless module for use with sockets. The
TM893GBK32/S features RAS access times of 60 ns, 70 ns, and 80 ns. This device is characterized for
operation from 0
°
C to 70
°
C.
operation
The TM497FBK32/S operates as eight TMS417409DJs connected as shown in Figure 1 and in Table 1. The
common I/O feature dictates the use of early write cycles to prevent contention on D and Q.
The TM893GBK32/S operates as sixteen TMS417409DJs connected as shown in Figure 2 and in Table 2. The
common I/O feature dictates the use of early write cycles to prevent contention on D and Q.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.
Copyright
1996, Texas Instruments Incorporated
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