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參數(shù)資料
型號: TMS416169P-60
廠商: Texas Instruments, Inc.
英文描述: 1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS
中文描述: 1048576字由16位擴充數(shù)據(jù)輸出高速DRAM等
文件頁數(shù): 1/67頁
文件大小: 1464K
代理商: TMS416169P-60
TMS55160, TMS55161, TMS55170, TMS55171
262144 BY 16-BIT MULTIPORT VIDEO RAMS
SMVS464 – MARCH1996
1
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
Organization:
DRAM: 262144 Words
×
16 Bits
SAM: 256 Words
×
16 Bits
Single 5.0-V Power Supply (
±
10%)
Dual-Port Accessibility – Simultaneous and
Asynchronous Access From the DRAM and
Serial-Address-Memory (SAM) Ports
Write-per-Bit Function for Selective Write to
Each I/O of the DRAM Port
Byte-Write Function for Selective Write to
Lower Byte (DQ0–DQ7) or Upper Byte
(DQ8–DQ15) of the DRAM Port
4-Column or 8-Column Block-Write
Function for Fast Area-Fill Operations
Enhanced Page Mode for Faster Access
With Extended-Data-Output (EDO) Option
for Faster System Cycle Time
CAS-Before-RAS (CBR) and Hidden
Refresh Functions
Long Refresh Period – Every 8 ms
(Maximum)
Full-Register-Transfer Function Transfers
Data from the DRAM to the Serial Register
Split-Register-Transfer Function Transfers
Data from the DRAM to One-Half of the
Serial Register While the Other Half is
Outputing Data to the SAM Port
256 Selectable Serial Register Starting
Points
Programmable Split-Register Stop Point
Up to 55-MHz Uninterrupted Serial-Data
Streams
3-State Serial Outputs for Easy Multiplexing
of Video Data Streams
All Inputs/Outputs and Clocks TTL
Compatible
Compatible With JEDEC Standards
Designed to Work With the Texas
Instruments (TI
) Graphics Family
Fabricated Using TI’s Enhanced
Performance Implanted CMOS (EPIC
)
Process
performance ranges
ACCESS TIME
ROW ENABLE
tRAC
(MAX)
ACCESS TIME
SERIAL DATA
tSCA
(MIN)
DRAM PAGE
CYCLE TIME
tPC
(MIN)
DRAM EDO
CYCLE TIME
tPC
(MIN)
SERIAL
CYCLE TIME
tSCC
(MIN)
OPERATING CURRENT
SERIAL PORT STANDBY
lCC1
(MAX)
–60 Speed
60 ns
15 ns
35 ns
30 ns
18 ns
180 mA
–70 Speed
70 ns
20 ns
40 ns
30 ns
22 ns
165 mA
Table 1. Device Option Table
DEVICE
POWER SUPPLY VOLTAGE
5.0 V
±
0.5 V
5.0 V
±
0.5 V
5.0 V
±
0.5 V
5.0 V
±
0.5 V
BLOCK-WRITE CAPABILITY
PAGE/EDO OPERATION
55160
4-column
Page
55161
4-column
EDO
55170
8-column
Page
55171
8-column
EDO
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
TI and EPIC are trademarks of Texas Instruments Incorporated.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
1996, Texas Instruments Incorporated
相關(guān)PDF資料
PDF描述
TMS416169P-70 1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS
TMS416169P-80 1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS
TMS418169P-60 1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS
TMS418169P-70 1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS
TMS418169P-80 1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TMS416169P-70 制造商:TI 制造商全稱:Texas Instruments 功能描述:1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS
TMS416169P-80 制造商:TI 制造商全稱:Texas Instruments 功能描述:1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS
TMS4161FML-15 制造商:Texas Instruments 功能描述:
TMS4164 DIE 制造商:Texas Instruments 功能描述:
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