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參數(shù)資料
| 型號(hào)： | TN0201KL |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 20−V (D−S) MOSFET |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 76K |
| 代理商： | TN0201KL |
FEATURES
TrenchFET Power MOSFET
APPLICATIONS
Direct Logic-Level Interface: TTL/CMOS
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
Battery Operated Systems
Solid-State Relays
TN0201K/TN0201KL
Vishay Siliconix
New Product
Document Number: 72671
S-40245—Rev. A, 16-Feb-04
www.vishay.com
1
N-Channel 20
V (D
S) MOSFET
PRODUCT SUMMARY
V
(BR)DSS
Min (V)
r
DS(on)
Max ( )
)
I
D
(A)
V
GS(th)
(V)
TN0201K
TN0201KL
20
1.0 @ V
GS
= 10 V
1 0 to 3 0
1.0 to 3.0
0.42
0.64
1.4 @ V
GS
= 4.5 V
0.35
0.53
TO-226AA
(TO-92)
Top View
S
D
G
1
2
3
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
TN0201KL
Device Marking
Front View
“S” TN
0201KL
xxyy
“S” = Siliconix Logo
xxyy
= Date Code
Marking Code: K3
ywl
K3 = Part Number Code for TN0201K
y
= Year Code
w
= Week Code
l
= Lot Traceability
TN0201K
Ordering Information: TN0201K-T1—E3 (Lead Free)
Ordering Information: TN0201KL-TR1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Limit
Parameter
Symbol
TN0201K
TN0201KL
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
T
A
= 25 C
I
D
0.42
0.64
T
A
= 70 C
0.33
0.51
A
Pulsed Drain Current
a
I
DM
0.8
1.5
Power Dissipation
T
A
= 25 C
P
D
0.35
0.8
W
T
A
= 70 C
0.22
0.51
Thermal Resistance, Junction-to-Ambient
R
thJA
357
156
C/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
Notes
a.
Pulse width limited by maximum junction temperature.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TN0201K | N-Channel 20-V MOSFET |
| TN0201K-T1-E3 | N-Channel 20−V (D−S) MOSFET |
| TN0201L | N-Channel 20-, 30-, 40-V (D-S) MOSFETs |
| TN0401L | N-Channel 20-, 30-, 40-V (D-S) MOSFETs |
| TN0201L | N-Channel Enhancement-Mode MOSFET Transistors(最小漏源擊穿電壓20V，夾斷電流0.64A的N溝道增強(qiáng)型MOSFET晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TN0201KL-TR1 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 20−V (D−S) MOSFET |
| TN0201KL-TR1-E3 | 功能描述:MOSFET 20V 0.64A 0.35W 1.4ohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN0201K-T1-E3 | 功能描述:MOSFET 20V 0.42A 1.0Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN0201L | 功能描述:MOSFET 20V 0.64A 0.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN0201T | 功能描述:MOSFET 20V 0.39A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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