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參數(shù)資料
| 型號(hào)： | TN0620N5 |
| 廠商： | SUPERTEX INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | 1.5 A, 200 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 封裝： | TO-220, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 27K |
| 代理商： | TN0620N5 |
7-55
7
BV
DSS
/
BV
DGS
200V
R
DS(ON)
(max)
I
D(ON)
(min)
V
GS(th)
(max)
6.0
1.0A
1.6V
TN0620N3
TN0620N5
MIL visual screening available
TN0620
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
TO-92
TO-220
Order Number / Package
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process
Flows and Ordering Information.
Features
I
I
Low threshold — 1.6V max.
I
I
High input impedance
I
I
Low input capacitance — 110pF typical
I
I
Fast switching speeds
I
I
Low on resistance
I
I
Free from secondary breakdown
I
I
Low input and output leakage
I
I
Complementary N- and P-channel devices
Applications
I
I
Logic level interfaces – ideal for TTL and CMOS
I
I
Solid state relays
I
I
Battery operated systems
I
I
Photo voltaic drives
I
I
Analog switches
I
I
General purpose line drivers
I
I
Telecom switches
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
300
°
C
Note: See Package Outline section for dimensions.
Package Options
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Ordering Information
TO-92
S G D
G
TO-220
TAB: DRAIN
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| TN0702 | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓20V，低門(mén)限1.0V，N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管) |
| TN2010T | N-Channel Enhancement-Mode MOSFET(最小漏源擊穿電壓200V，夾斷電流0.12A的N溝道增強(qiáng)型MOSFET晶體管) |
| TN2010T | N-Channel Enhancement-Mode MOSFET Transistor |
| TN2124 | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓240V，低門(mén)限2.0V，N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管) |
| TN2130 | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓300V，低門(mén)限2.4V，N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TN0635 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs |
| TN0635N3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 200MA I(D) | TO-92 |
| TN0635ND | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs |
| TN-064064-25-9 | 制造商:MACOM 制造商全稱:Tyco Electronics 功能描述:Label format - Old format order code cross reference |
| TN0640N3 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs |
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