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參數資料
| 型號： | TO-220AB |
| 廠商： | HSMC CORP. |
| 英文描述： | N-Channel Power Field Effect Transistor |
| 中文描述： | N溝道功率場效應晶體管 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 71K |
| 代理商： | TO-220AB |
HI-SINCERITY
MICROELECTRONICS CORP.
H06N60 Series
N-Channel Power Field Effect Transistor
Spec. No. : MOS200402
Issued Date : 2004.04.01
Revised Date : 2005.03.10
Page No. : 1/6
H06N60U, H06N60E, H06N60F
HSMC Product Specification
Description
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed to
withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
Features
Robust High Voltage Termination
Avalanc he Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast
Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and V
DS(on)
Specified at Elevated Temperature
Absolute Maximum Ratings
Symbol
I
D
I
DM
V
GS
Parameter
Value
6
24
±
20
Units
A
A
Drain to Current (Continuous)
Drain to Current (Pulsed)
Gate-to-Source Voltage (Continue)
Total Power Dissipation (T
C
=25
o
C)
H06N60U (TO-263)
H06N60E (TO-220AB)
H06N60F (TO-220FP)
Derate above 25
O
C
H06N60U (TO-263)
H06N60E (TO-220AB)
H06N60F (TO-220FP)
Operating Temperature Range
Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25
O
C
(V
DD
=100V, V
GS
=10V, I
L
=6A, L=10mH, R
G
=25
)
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
V
110
110
40
W
W
W
P
D
0.58
0.58
0.33
W/
°
C
W/
°
C
W/
o
C
T
j
T
stg
-55 to 150
-55 to 150
O
C
O
C
E
AS
250
mJ
T
L
260
°
C
Note: 1. V
=50V, I
=10A
2. Pulse Width and frequency is limited by T
j(max)
and thermal response
H06N60 Series Pin Assignment
1
2
3
3-Lead Plastic
TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3-Lead Plastic
TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3-Lead Plastic
TO-263
Package Code: U
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
1
2
3
Tab
1
2
3
Tab
H06N60 Series
Symbol:
G
D
S
相關PDF資料 |
PDF描述 |
|---|---|
| TO-220FP | TRANSISTOR OUTLINE PACKAGE |
| TO-220 | Bi-directional Glass passivated junction |
| TO-220FP | 8&16 Amp Schottky Rectifiers |
| TO-263-5 | CONNECTOR ACCESSORY |
| TO-220FP | N-Channel Power Field Effect Transistor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TO-220AB CASE | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220AB N 850V 8A 125W BCE |
| TO220AC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:FAST RECOVERY RECTIFIER DIODE |
| TO-220AC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:20 Amp HT Power Schottky Barrier Rectifier |
| TO220-BUSHING | 制造商:NTE Electronics 功能描述:BUSHING FOR TO-220 |
| TO220CP-3 | 制造商:ROHM 制造商全稱:Rohm 功能描述:LSI Assembly |
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