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參數(shù)資料
| 型號： | TP0202 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | 功率晶體管 |
| 英文描述： | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| 中文描述： | P通道20 - V（下局副局長）MOSFET的低閾值 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 30K |
| 代理商： | TP0202 |
TP0202T
Vishay Siliconix
Document Number: 70208
S-04279—Rev. G, 16-Jul-01
www.vishay.com
11-1
P-Channel 20-V (D-S) MOSFET
V
(BR)DSS
Min (V)
r
DS(on)
Max ( )
V
GS(th)
(V)
I
D
(A)
1.4 @ V
GS
= –10 V
–1.3 to – 3 V
–0.41
–20
3.5 @ V
GS
= –4.5 V
–1.3 to – 3 V
–0.27
High-Side Switching
Low On-Resistance: 0.9
Low Threshold: –2.1 V
Fast Switching Speed: 18 ns
Low Input Capacitance: 55 pF
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Switching
Easily Driven Without Buffer
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
Battery Operated Systems
Power Supply, Converter Circuits
Motor Control
G
TO-236
(SOT-23)
S
D
Top View
2
3
1
Marking Code: P3
wll
P3 = Part Number Code for TP0202T
w
= Week Code
ll
= Lot Traceability
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
–20
Gate-Source Voltage
V
GS
20
V
T
A
= 25 C
–0.41
Continuous Drain Current
(T
J
= 150 C)
T
A
= 70 C
I
D
–0.26
A
Pulsed Drain Current
a
I
DM
–0.75
T
A
= 25 C
0.35
Power Dissipation
T
A
= 70 C
P
D
0.22
W
Thermal Resistance, Junction-to-Ambient
R
thJA
357
C/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Notes
a.
Pulse width limited by maximum junction temperature.
For applications information see AN804.
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| TP0202K | 制造商:Vishay Siliconix 功能描述:MOSFET P SOT-23 制造商:Vishay Siliconix 功能描述:MOSFET, P, SOT-23 |
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| TP0202K-T1-E3 | 功能描述:MOSFET 30V 0.385A 1.4Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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